Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide von Oberman, D.B., Lee, H., Götz, W.K., Harris, J.S.

Volltext

Relation between Structural Parameters and the Effective Electron-Hole Separation in InGaN/GaN Quantum Wells von Shapiro, N.A., Feick, H., Gardner, N.F., Götz, W.K., Waltereit, P., Speck, J.S., Weber, E.R.

Volltext

Effect of grown-in biaxial strain on deep level defects in Si1−C /Si epitaxial heterostructures von Singh, D.V., Mitchell, T.O., Hoyt, J.L., Gibbons, J.F., Johnson, N.M., Götz, W.K.

Volltext

Effect of grown-in biaxial strain on deep level defects in Si1−yCy/Si epitaxial heterostructures von Singh, D.V., Mitchell, T.O., Hoyt, J.L., Gibbons, J.F., Johnson, N.M., Götz, W.K.

Volltext

High-flux and high-efficiency nitride-based light-emitting devices von Gardner, N.F., Bhat, J., Collins, D., Cook, L., Craford, M.G., Fletcher, R.M., Grillot, P., Gotz, W.K., Kueper, M., Khare, R., Kim, A., Krames, M.R., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S.A., Subramanya, S., Trottier, T., Wierer, J.J.

Volltext