Atomic Layer Etching: Rethinking the Art of Etch von Kanarik, Keren J, Tan, Samantha, Gottscho, Richard A

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The grand challenges of plasma etching: a manufacturing perspective von Lee, Chris G N, Kanarik, Keren J, Gottscho, Richard A

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Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective von Ishikawa, Kenji, Ishijima, Tatsuo, Shirafuji, Tatsuru, Armini, Silvia, Despiau-Pujo, Emilie, Gottscho, Richard A., Kanarik, Keren J., Leusink, Gert J., Marchack, Nathan, Murayama, Takahide, Morikawa, Yasuhiro, Oehrlein, Gottlieb S., Park, Sangwuk, Hayashi, Hisataka, Kinoshita, Keizo

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Overview of atomic layer etching in the semiconductor industry von Kanarik, Keren J., Lill, Thorsten, Hudson, Eric A., Sriraman, Saravanapriyan, Tan, Samantha, Marks, Jeffrey, Vahedi, Vahid, Gottscho, Richard A.

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Human–machine collaboration for improving semiconductor process development von Kanarik, Keren J., Osowiecki, Wojciech T., Lu, Yu (Joe), Talukder, Dipongkar, Roschewsky, Niklas, Park, Sae Na, Kamon, Mattan, Fried, David M., Gottscho, Richard A.

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Predicting synergy in atomic layer etching von Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Kim, Taeseung, Lill, Thorsten, Kabansky, Alexander, Hudson, Eric A., Ohba, Tomihito, Nojiri, Kazuo, Yu, Jengyi, Wise, Rich, Berry, Ivan L., Pan, Yang, Marks, Jeffrey, Gottscho, Richard A.

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Universal scaling relationship for atomic layer etching von Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Berry, Ivan L., Pan, Yang, Gottscho, Richard A.

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Applying sputtering theory to directional atomic layer etching von Berry, Ivan L., Kanarik, Keren J., Lill, Thorsten, Tan, Samantha, Vahedi, Vahid, Gottscho, Richard A.

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Highly Selective Directional Atomic Layer Etching of Silicon von Tan, Samantha, Yang, Wenbing, Kanarik, Keren J., Lill, Thorsten, Vahedi, Vahid, Marks, Jeff, Gottscho, Richard A.

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(Invited) Divide Et Impera: Towards New Frontiers with Atomic Layer Etching von Lill, Thorsten, Kanarik, Keren J., Tan, Samantha S.H., Shen, Meihua, Pan, Yang, Marks, Jeffrey, Vahedi, Vahid, Gottscho, Richard A.

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Aspect ratio independent etching : fact or fantasy ? von BAILEY, A. D, GOTTSCHO, R. A

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Real-time monitoring of silicon nitride composition during plasma enhanced chemical vapor deposition von BAILEY, A. D, GOTTSCHO, R. A

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Erratum: “Universal scaling relationship for atomic layer etching” [J. Vac. Sci. Technol. A 39, 010401 (2021)] von Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Berry, Ivan L., Pan, Yang, Gottscho, Richard A.

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Universal scaling relationship for atomic layer etching (vol 39, 010401, 2021) von Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Berry, Ivan L., Pan, Yang, Gottscho, Richard A.

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Future of plasma etching for microelectronics: Challenges and opportunities von Oehrlein, Gottlieb S., Brandstadter, Stephan M., Bruce, Robert L., Chang, Jane P., DeMott, Jessica C., Donnelly, Vincent M., Dussart, Rémi, Fischer, Andreas, Gottscho, Richard A., Hamaguchi, Satoshi, Honda, Masanobu, Hori, Masaru, Ishikawa, Kenji, Jaloviar, Steven G., Kanarik, Keren J., Karahashi, Kazuhiro, Ko, Akiteru, Kothari, Hiten, Kuboi, Nobuyuki, Kushner, Mark J., Lill, Thorsten, Luan, Pingshan, Mesbah, Ali, Miller, Eric, Nath, Shoubhanik, Ohya, Yoshinobu, Omura, Mitsuhiro, Park, Chanhoon, Poulose, John, Rauf, Shahid, Sekine, Makoto, Smith, Taylor G., Stafford, Nathan, Standaert, Theo, Ventzek, Peter L. G.

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The grand challenges of plasma etching: a manufacturing perspective von Lee, Chris G N, Kanarik, Keren J, Gottscho, Richard A

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Ion transport in an electron cyclotron resonance plasma von SADEGHI, N, NAKANO, T, TREVOR, D. J, GOTTSCHO, R. A

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Ion and neutral temperatures in electron cyclotron resonance plasma reactors von NAKANO, T, SADEGHI, N, GOTTSCHO, R. A

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Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective von Ishikawa, Kenji, Ishijima, Tatsuo, Shirafuji, Tatsuru, Armini, Silvia, Despiau-Pujo, Emilie, Gottscho, Richard A., Kanarik, Keren J., Leusink, Gert J., Marchack, Nathan, Murayama, Takahide, Morikawa, Yasuhiro, Oehrlein, Gottlieb S., Park, Sangwuk, Hayashi, Hisataka, Kinoshita, Keizo

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Real-time, in situ monitoring of room-temperature silicon surface cleaning using hydrogen and ammonia plasmas von ZHEN-HONG ZHOU, AYDIL, E. S, GOTTSCHO, R. A, CHABAL, Y. J, REIF, R

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