Correlation between the valence- and conduction-band-tail energies in hydrogenated amorphous silicon von Sherman, S., Wagner, S., Gottscho, R. A.

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Semiempirical profile simulation of aluminum etching in a Cl2/BCl3 plasma von Cooperberg, D. J., Vahedi, V., Gottscho, R. A.

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Real-time monitoring of surface chemistry during plasma processing von Aydil, E. S., Gottscho, R. A., Chabal, Y. J.

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The Gaseous Electronics Conference radio‐frequency reference cell: A defined parallel‐plate radio‐frequency system for experimental and theoretical studies of plasma‐processing dis... von Hargis, P. J., Greenberg, K. E., Miller, P. A., Gerardo, J. B., Torczynski, J. R., Riley, M. E., Hebner, G. A., Roberts, J. R., Olthoff, J. K., Whetstone, J. R., Van Brunt, R. J., Sobolewski, M. A., Anderson, H. M., Splichal, M. P., Mock, J. L., Bletzinger, P., Garscadden, A., Gottscho, R. A., Selwyn, G., Dalvie, M., Heidenreich, J. E., Butterbaugh, Jeffery W., Brake, M. L., Passow, M. L., Pender, J., Lujan, A., Elta, M. E., Graves, D. B., Sawin, H. H., Kushner, M. J., Verdeyen, J. T., Horwath, R., Turner, T. R.

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Negative Ion Kinetics in RF Glow Discharges von Gottscho, Richard A., Gaebe, Carl E.

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Optical techniques in plasma diagnostics von Gottscho, R. A., Miller, T. A.

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Measurement of electron densities in electron cyclotron resonance plasmas for etching of III-V semiconductors von PEARTON, S. J, NAKANO, T, GOTTSCHO, R. A

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Photoemission optogalvanic spectroscopy: an in situ method for plasma electrode surface characterization von DOWNEY, S. W, MITCHELL, A, GOTTSCHO, R. A

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Ion transport in an electron cyclotron resonance plasma von SADEGHI, N, NAKANO, T, TREVOR, D. J, GOTTSCHO, R. A

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Ion and neutral temperatures in electron cyclotron resonance plasma reactors von NAKANO, T, SADEGHI, N, GOTTSCHO, R. A

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Automated pressure scanning of tunable dye lasers von Gottscho, Richard A.

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Carbon reactions in reactive ion etched silicon von BENTON, J. L, MICHEL, J, KIMERLING, L. C, WEIR, B. E, GOTTSCHO, R. A

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Real-time, in situ monitoring of room-temperature silicon surface cleaning using hydrogen and ammonia plasmas von ZHEN-HONG ZHOU, AYDIL, E. S, GOTTSCHO, R. A, CHABAL, Y. J, REIF, R

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Substrate effect on plasma-enhanced chemical vapor deposited silicon nitride von SHERMAN, S, WAGNER, S, MUCHA, J, GOLTSCHO, R. A

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Sensitive, nonintrusive, in-situ measurement of temporally and spatially resolved plasma electric fields von MOORE, C. A, DAVIS, G. P, GOTTSCHO, R. A

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Aspect ratio independent etching : fact or fantasy ? von BAILEY, A. D, GOTTSCHO, R. A

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Optical emission actinometry and spectral line shapes in rf glow discharges von GOTTSCHO, R. A, DONNELLY, V. M

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Etch depth estimation of large-period silicon gratings with multivariate calibration of rigorously simulated diffraction profiles von Naqvi, S. S. H., Franke, J. E., Haaland, D. M., Gottscho, R. A., Kornblit, A., Niemczyk, T. M., Krukar, R. H., McNeil, J. R.

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Limits to ion energy control in high density glow discharges : measurement of absolute metastable ion concentrations von GIAPIS, K. P, NADER SADEGHI, MARGOT, J, GOTTSCHO, R. A, LEE, T. C. J

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Real-time monitoring of low-temperature hydrogen plasma passivation of GaAs von GOTTSCHO, R. A, PREPPERNAU, B. L, PEARTON, S. J, EMERSON, A. B, GIAPIS, K. P

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