Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication von Bolten, Jens, Wahlbrink, Thorsten, Schmidt, Mathias, Gottlob, Heinrich D.B., Kurz, Heinrich

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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers von Engström, Olof, Raeissi, Bahman, Piscator, Johan, Mitrovic, Ivona Z, Hall, Stephen, Gottlob, Heinrich D. B., Schmidt, Mathias, Hurley, Paul K., Cherkaoui, Karim

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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers von Engström, Olof, Raeissi, Bahman, Piscator, Johan, Mitrovic, Ivona Z., Hall, Stephen, Gottlob, Heinrich D. B., Szmidt, Mathias, Hurley, Paul K., Cherkaoui, Karim

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Integration of ALD AlN work function tuning layers von Chi-Pei Lu, Schmidt, Mathias, Gottlob, Heinrich D B, Kurz, Heinrich

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Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- k dielectrics von Gottlob, Heinrich D. B., Mollenhauer, Thomas, Wahlbrink, Thorsten, Schmidt, Mathias, Echtermeyer, Tim, Efavi, Johnson K., Lemme, Max C., Kurz, Heinrich

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(Invited) Admittance Spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures von Ducroquet, Frederique, Engström, Olof, Gottlob, Heinrich D., Lopes, Joao Marcelo J., Schubert, Jürgen

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Non-Planar Devices for Nanoscale CMOS von Lemme, Max C., Gottlob, H. D. B., Kurz, Heinrich

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LES SOUVENIRS DʻUN JEUNE PRISONNIER, OU MEMOIRES SUR LES PRISONS DE LA FORCE ET DUPLESSIS von Alexis François Artaud de Montor, Jean-Jacques Leuliette, Trophime-Gérard de Lally-Tolendal, Augustin Barruel, Heinrich Collinet, Théophile Mandar, resp_stt20040003623_1

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