Functional electronic inversion layers at ferroelectric domain walls von Mundy, J. A., Schaab, J., Kumagai, Y., Cano, A., Stengel, M., Krug, I. P., Gottlob, D. M., Doğanay, H., Holtz, M. E., Held, R., Yan, Z., Bourret, E., Schneider, C. M., Schlom, D. G., Muller, D. A., Ramesh, R., Spaldin, N. A., Meier, D.

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Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy von Schaab, J., Krug, I. P., Nickel, F., Gottlob, D. M., Doğanay, H., Cano, A., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Ramesh, R., Meier, D.

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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers von Engström, Olof, Raeissi, Bahman, Piscator, Johan, Mitrovic, Ivona Z, Hall, Stephen, Gottlob, Heinrich D. B., Schmidt, Mathias, Hurley, Paul K., Cherkaoui, Karim

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Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions von Barrett, N., Gottlob, D. M., Mathieu, C., Lubin, C., Passicousset, J., Renault, O., Martinez, E.

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Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication von Bolten, Jens, Wahlbrink, Thorsten, Schmidt, Mathias, Gottlob, Heinrich D.B., Kurz, Heinrich

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Electronic properties of Co2FeSi investigated by X-ray magnetic linear dichroism von Emmel, M., Alfonsov, A., Legut, D., Kehlberger, A., Vilanova, E., Krug, I.P., Gottlob, D.M., Belesi, M., Büchner, B., Kläui, M., Oppeneer, P.M., Wurmehl, S., Elmers, H.J., Jakob, G.

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Tuning the orbital ordering in La0.7Sr0.3MnO3 thin films in all-oxide hybrids von Do anay, H., Krug, I. P., Schubert, J., Cramm, S., Gottlob, D. M., Nickel, F., Schneider, C. M.

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Reversible temperature-driven domain transition in bistable Fe magnetic nanostrips grown on Ru(0001) von Quesada, A., Monti, M., Krug, I. P., Rougemaille, N., Nickel, F., Gottlob, D. M., Doganay, H., N’Diaye, A. T., Chen, G., Serrano, A., McCarty, K. F., Fernández, J. F., Schneider, C. M., Schmid, A. K., de la Figuera, J.

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Time-resolved magnetic imaging in an aberration-corrected, energy-filtered photoemission electron microscope von Nickel, F., Gottlob, D.M., Krug, I.P., Doganay, H., Cramm, S., Kaiser, A.M., Lin, G., Makarov, D., Schmidt, O.G., Schneider, C.M.

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Nanoscale TiN metal gate technology for CMOS integration von Lemme, M.C., Efavi, J.K., Mollenhauer, T., Schmidt, M., Gottlob, H.D.B., Wahlbrink, T., Kurz, H.

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(Invited) Admittance Spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures von Ducroquet, Frederique, Engström, Olof, Gottlob, Heinrich D., Lopes, Joao Marcelo J., Schubert, Jürgen

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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers von Engström, Olof, Raeissi, Bahman, Piscator, Johan, Mitrovic, Ivona Z., Hall, Stephen, Gottlob, Heinrich D. B., Szmidt, Mathias, Hurley, Paul K., Cherkaoui, Karim

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Highly selective etch process for silicon-on-insulator nano-devices von Wahlbrink, T., Mollenhauer, T., Georgiev, Y.M., Henschel, W., Efavi, J.K., Gottlob, H.D.B., Lemme, M.C., Kurz, H., Niehusmann, J., Bolivar, P. Haring

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Gentle FUSI NiSi metal gate process for high- k dielectric screening von Gottlob, H.D.B., Lemme, M.C., Schmidt, M., Echtermeyer, T.J., Mollenhauer, T., Kurz, H., Cherkaoui, K., Hurley, P.K., Newcomb, S.B.

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Charge trapping in ultrathin Gd2O3 high-k dielectric von NAZAROV, A. N, GOMENIUK, Y. V, GOMENIUK, Y. Y, GOTTLOB, H. D. B, SCHMIDT, M, LEMME, M. C, CZEMOHORSKY, M, OSTEN, H. J

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Tungsten work function engineering for dual metal gate nano-CMOS von EFAVI, J. K, MOLLENHAUER, T, WAHLBRINK, T, GOTTLOB, H. D. B, LEMME, M. C, KURZ, H

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Nickel-silicide process for ultra-thin-body SOI-MOSFETs von Schmidt, M., Mollenhauer, T., Gottlob, H.D.B., Wahlbrink, T., Efavi, J.K., Ottaviano, L., Cristoloveanu, S., Lemme, M.C., Kurz, H.

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Exchange coupling in the correlated electronic states of amorphous GdFe films von Elmers, H. J., Chernenkaya, A., Medjanik, K., Emmel, M., Jakob, G., Schönhense, G., Gottlob, D., Krug, I., de Groot, F. M. F., Gloskovskii, A.

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy von Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K., Osten, H.J.

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Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs von Schmidt, M., Stefani, A., Gottlob, H.D.B., Kurz, H.

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