Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide von GOTTHOLD, D. W, GUO, S. P, BIRKHAHN, R, ALBERT, B, FLORESCU, D, PERES, B

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Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study von Chao, Kuo-Jen, Liu, Ning, Shih, Chih-Kang, Gotthold, D. W., Streetman, B. G.

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Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode von Neuburger, M., Allgaier, J., Zimmermann, T., Daumiller, I., Kunze, M., Birkhahn, R., Gotthold, D.W., Kohn, E.

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Measurement Of Electric Fields In GaN/AlGaN FETs Using Photoreflectance With Different Excitation Energies von Gaskill, D K, Glembocki, O J, Gotthold, D W, Guo, S P, Albert, B E, Vertiatchikh, A V, Eastman, L F

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GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm von Kinsey, G. S., Gotthold, D. W., Holmes, A. L., Campbell, J. C.

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Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys von Chao, Kuo-Jen, Shih, Chih-Kang, Gotthold, D. W., Streetman, B. G.

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GaNAs avalanche photodiode operating at 0.94 μm von Kinsey, G. S., Gotthold, D. W., Holmes, A. L., Streetman, B. G., Campbell, J. C.

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Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma von Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.

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Volume manufacturing of 0.6 eV bandgap thermophotovoltaic devices on InAsP lattice mismatched buffers by MBE von Bird, T.E., Sheldon, M., Bresnahan, R.C., O'Steen, M.L., Gotthold, D.W., Wernsman, B., Link, S.D., Messham, R.L.

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Graphene oxide membranes with high permeability and selectivity for dehumidification of air von Shin, Yongsoon, Liu, Wei, Schwenzer, Birgit, Manandhar, Sandeep, Chase-Woods, Dylan, Engelhard, Mark H., Devanathan, Ram, Fifield, Leonard S., Bennett, Wendy D., Ginovska, Bojana, Gotthold, David W.

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NABat ML: Utilizing deep learning to enable crowdsourced development of automated, scalable solutions for documenting North American bat populations von Khalighifar, Ali, Gotthold, Benjamin S., Adams, Erin, Barnett, Jenny, Beard, Laura O., Britzke, Eric R., Burger, Paul A., Chase, Kimberly, Cordes, Zackary, Cryan, Paul M., Ferrall, Emily, Fill, Christopher T., Gibson, Scott E., Haulton, G. Scott, Irvine, Kathryn M., Katz, Lara S., Kendall, William L., Long, Christen A., Mac Aodha, Oisin, McBurney, Tessa, McCarthy, Sara, McKown, Matthew W., O'Keefe, Joy, Patterson, Lucy D., Pitcher, Kristopher A., Rustand, Matthew, Segers, Jordi L., Seppanen, Kyle, Siemers, Jeremy L., Stratton, Christian, Straw, Bethany R., Weller, Theodore J., Reichert, Brian E.

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Graphene oxide membranes with high permeability and selectivity for dehumidification of air von Shin, Yongsoon, Liu, Wei, Schwenzer, Birgit, Manandhar, Sandeep, Chase-Woods, Dylan, Engelhard, Mark H., Devanathan, Ram, Fifield, Leonard S., Bennett, Wendy D., Ginovska, Bojana, Gotthold, David W.

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Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system von Gherasoiu, I., O’Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J.

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Growth of high quality InN on production style PA-MBE system von Gherasoiu, I., O'Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J.

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An excess of chromosome 1 breakpoints in male infertility von Bache, Iben, Assche, Elvire Van, Cingoz, Sultan, Bugge, Merete, Tümer, Zeynep, Hjorth, Mads, Lundsteen, Claes, Lespinasse, James, Winther, Kirsten, Niebuhr, Anita, Kalscheuer, Vera, Liebaers, Inge, Bonduelle, Maryse, Tournaye, Herman, Ayuso, Carmen, Barbi, Gotthold, Blennow, Elisabeth, Bourrouillou, Georges, Brondum-Nielsen, Karen, Bruun-Petersen, Gert, Croquette, Marie-Francoise, Dahoun, Sophie, Dallapiccola, Bruno, Davison, Val, Delobel, Bruno, Duba, Hans-Christoph, Duprez, Laurence, Ferguson-Smith, Malcolm, FitzPatrick, David R, Grace, Elizabeth, Hansmann, Ingo, Hultén, Maj, Jensen, Peter KA, Jonveaux, Philippe, Kristoffersson, Ulf, Lopez-Pajares, Isidora, McGowan-Jordan, Jean, Murken, Jan, Orera, Maria, Parkin, Tony, Passarge, Eberhard, Ramos, Carmen, Rasmussen, Kirsten, Schempp, Werner, Schubert, Regine, Schwinger, Eberhard, Shabtai, Fiorella, Smith, Kim, Stallings, Raymond, Stefanova, Margarita, Tranebjerg, Lisbeth, Turleau, Catherine, van der Hagen, Carl Birger, Vekemans, Michel, Vokac, Nadja Kokalj, Wagner, Klaus, Wahlstroem, Jan, Zelante, Leopoldo, Tommerup, Niels

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Characterization of high quality InN grown on production-styleplasma assisted molecular beam epitaxy system von Gherasoiu, I., O'Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J.

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Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates von Lee, J.-W., Kumar, V., Schwindt, R., Kuliev, A., Birkhahn, R., Gotthold, D., Guo, S., Albert, B., Adesida, I.

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Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates von Lee, J-W, Kumar, V, Schwindt, R, Kuliev, A, Birkhahn, R, Gotthold, D, Guo, S, Albert, B, Adesida, I

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High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz von Kumar, V, Lee, J-W, Kuliev, A, Aktas, O, Schwindt, R, Birkhahn, R, Gotthold, D, Guo, S, Albert, B, Adesida, I

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High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz von Kumar, V., Lee, J.-W., Kuliev, A., Aktas, O., Schwindt, R., Birkhahn, R., Gotthold, D., Guo, S., Albert, B., Adesida, I.

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