Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods von Park, Jinsub, Goto, Takenari, Yao, Takafumi, Lee, Seogwoo, Cho, Moungwhan

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Biexciton luminescence in high-quality ZnO epitaxial thin films von Yamamoto, Aishi, Miyajima, Kensuke, Goto, Takenari, Ju Ko, Hang, Yao, Takafumi

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Dynamics of photoexcited carriers in ZnO epitaxial thin films von Yamamoto, Aishi, Kido, Takeo, Goto, Takenari, Chen, Yefan, Yao, Takafumi, Kasuya, Atsuo

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Self-separated freestanding GaN using a NH4Cl interlayer von Lee, Hyun-Jae, Lee, S. W., Goto, H., Lee, Sang-Hyun, Lee, Hyo-Jong, Ha, J. S., Goto, Takenari, Cho, M. W., Yao, T., Hong, Soon-Ku

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Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias von Koike, Kayo, Sato, Keiichi, Fujii, Katsushi, Goto, Takenari, Yao, Takafumi

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Anomalous time variation of photocurrent in GaN during photoelectrochemical reaction for H2 gas generation in NaOH aqueous solution von Sato, Keiichi, Fujii, Katsushi, Koike, Kayo, Goto, Takenari, Yao, Takafumi

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Carrier Pathway for Photoelectrochemical Water Oxidation with Intermediate State in n‑type GaN Compared with Route of Anodic Corrosion von Fujii, Katsushi, Goto, Takenari, Koike, Kayo, Sugiyama, Masakazu, Nakamura, Shinichiro, Wada, Satoshi

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Excitation light intensity dependence of 2.2 eV yellow photoluminescence of n-type GaN von Fujii, Katsushi, Goto, Takenari, Nakamura, Shinichiro, Yao, Takafumi

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Near band-edge 3.357 eV emission of Ga-face (0001) GaN grown by ammonothermal method von Fujii, Katsushi, Fujimoto, Gakuyo, Goto, Takenari, Yao, Takafumi, Kagamitani, Yuji, Hoshino, Naruhiro, Ehrentraut, Dirk, Fukuda, Tsuguo

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Exciton state in two-dimensional perovskite semiconductor (C10H21NH3)2PbI4 von Ishihara, Teruya, Takahashi, Jun, Goto, Takenari

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Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements von Koike, Kayo, Goto, Takenari, Nakamura, Shinichiro, Wada, Satoshi, Fujii, Katsushi

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Photoluminescence properties of GaN with dislocations induced by plastic deformation von Yonenaga, Ichiro, Makino, Hisao, Itoh, Shun, Goto, Takenari, Yao, Takafumi

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Fabrication of free-standing GaN substrate using evaporable buffer layer (EBL) von Lee, Hyun-Jae, Ha, Jun-Seok, Lee, Hyo-Jong, Lee, S. W., Fujii, K., Hong, S. K., Chang, J. H., Cho, M. W., Goto, Takenari, Yao, T.

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Time Dependence of the Growth Morphology of GaN Single Crystals Prepared in a Na–Ga Melt von Yamane, Hisanori, Aoki, Masato, Yamada, Takahiro, Shimada, Masahiko, Goto, Hiroki, Goto, Takenari, Makino, Hisao, Yao, Takafumi, Sarayama, Seiji, Iwata, Hirokazu, DiSalvo, Francis J.

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Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals von Fujii, Katsushi, Goto, Takenari, Yao, Takafumi

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Corrigendum: Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods von Park, Jinsub, Goto, Takenari, Yao, Takafumi, Lee, Seogwoo, Cho, Moungwhan

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Electronic states of pyrene single crystal and of its single molecule inserted in a molecular vessel of cyclodextrin von Takahashi, Nobuaki, Gombojav, Bold, Yoshinari, Takehisa, Nagasaka, Shin-ichiro, Takahashi, Yoshio, Yamamoto, Aishi, Goto, Takenari, Kasuya, Atsuo

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Waveguide lasing from V-shaped ZnO microstructure von Lee, Sang Hyun, Goto, Takenari, Miyazaki, Hiroshi, Yao, Takafumi

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Optical Resonant Cavity in a Nanotaper von Lee, Sang Hyun, Goto, Takenari, Miyazaki, Hiroshi, Chang, Jiho, Yao, Takafumi

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Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer von Sato, Tadashige, Okano, Shinya, Goto, Takenari, Yao, Takafumi, Seto, Ritsu, Sato, Akira, Goto, Hideki

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