4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing von Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Hatem, C., Kim, H., Jones, K. S.

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Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si von Muller, D. A, Voyles, P. M, Grazul, J. L, Citrin, P. H, Gossmann, H.-J. L

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing von Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Kim, H., Pearton, S.J., Jones, K.S.

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Implantation and transient B diffusion in Si: The source of the interstitials von Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Poate, J. M.

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy von RUMMUKAINEN, M, MAKKONEN, I, RANKI, V, PUSKA, M. J, SAARINEN, K, GOSSMANN, H.-J. L

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling von Pelaz, Lourdes, Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Carbon in silicon: Modeling of diffusion and clustering mechanisms von Pinacho, R., Castrillo, P., Jaraiz, M., Martin-Bragado, I., Barbolla, J., Gossmann, H.-J., Gilmer, G.-H., Benton, J.-L.

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors von Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion von Stolk, P. A., Eaglesham, D. J., Gossmann, H.-J., Poate, J. M.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling von Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

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Boron-enhanced diffusion of boron from ultralow-energy ion implantation von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E.

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Carbon diffusion in silicon von Werner, P., Gösele, U., Gossmann, H.-J., Jacobson, D. C.

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Simulation of cluster evaporation and transient enhanced diffusion in silicon von Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D., Gossmann, H.-J.

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Haynes, T. E., Erokhin, Yu. E.

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Activation and deactivation of implanted B in Si von Pelaz, Lourdes, Venezia, V. C., Gossmann, H.-J., Gilmer, G. H., Fiory, A. T., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100) von EAGLESHAM, D. J, GOSSMANN, H.-J, CERULLO, M

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon von Venezia, V. C., Haynes, T. E., Agarwal, Aditya, Pelaz, L., Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J.

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