p-type doping of graphene with F4-TCNQ von Pinto, H, Jones, R, Goss, J P, Briddon, P R

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Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching von Rashid, Marzaini, Horrocks, B. R., Healy, N., Goss, J. P., Horsfall, A. B.

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Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films von Tiwari, Amit K., Goss, J. P., Briddon, P. R., Horsfall, A. B., Wright, N. G., Jones, R., Rayson, M. J.

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Oxygen vacancy migration in compressively strained SrTiO3 von Al-Hamadany, Raied, Goss, J. P., Briddon, P. R., Mojarad, Shahin A., Al-Hadidi, Meaad, O'Neill, A. G., Rayson, M. J.

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Mechanisms of doping graphene von Pinto, H., Jones, R., Goss, J. P., Briddon, P. R.

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On the diffusion of NV defects in diamond von Pinto, H., Jones, R., Palmer, D. W., Goss, J. P., Briddon, P. R., Öberg, S.

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Di-nitrogen-vacancy-hydrogen defects in diamond: a computational study von Peaker, C. V., Goss, J. P., Briddon, P. R., Horsfall, A. B., Rayson, M. J.

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Identification of the structure of the 3107 cm(-1) H-related defect in diamond von Goss, J P, Briddon, P R, Hill, V, Jones, R, Rayson, M J

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Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature von Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., King, P. J., Wright, N. G., O'Neill, A. G., Horsfall, A. B., Goss, J. P., Wells, G. H., Hunt, M. R. C.

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Donor and acceptor states in diamond von Goss, J.P., Briddon, P.R., Jones, R., Sque, S.

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Hyperfine interactions at nitrogen interstitial defects in diamond von Atumi, M K, Goss, J P, Briddon, P R, Shrif, F E, Rayson, M J

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A route for tunable C-VO doped perovskite SrTiO3 functionalities through epitaxial strain engineering von AL-Hamadany, Raied A S, Goss, J P, Briddon, P R

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A density functional theory study of models for the N3 and OK1 EPR centres in diamond von Etmimi, K M, Goss, J P, Briddon, P R, Gsiea, A M

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Structure and electron affinity of the 4H-SiC (0001) surfaces: a methodological approach for polar systems von Beattie, J. M. A., Goss, J. P., Rayson, M. J., Briddon, P. R.

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Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2 × 1) diamond surface von Beattie, J M A, Goss, J P, Rayson, M J, Briddon, P R

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Identification of the tetra-interstitial in silicon von Coomer, B J, Goss, J P, Jones, R, Öberg, S, Briddon, P R

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The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material von Goss, J P, Briddon, P R, Jones, R, Sque, S

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Theory of Jahn–Teller distortions of the P donor in diamond von Eyre, R J, Goss, J P, Briddon, P R, Hagon, J P

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The lattice location of Ni in diamond: a theoretical study von Goss, J P, Briddon, P R, Jones, R, Öberg, S

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Electron-affinity and surface-stability of aluminium-oxide terminated diamond surfaces von Beattie, J.M.A., Goss, J.P., Rayson, M.J., Briddon, P.R.

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