Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation von Zakaria, A., Hong, W., Woo, R., Goorsky, M.S.

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Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications von Liu, J.L, Wang, K.L, Moore, C.D, Goorsky, M.S, Borca-Tasciuc, T, Chen, G

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Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon von Cheng, S.F., Gao, L., Woo, R.L., Pangan, A., Malouf, G., Goorsky, M.S., Wang, K.L., Hicks, R.F.

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Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution von Zhang, Xi, Ren, Fei, Goorsky, M.S., Tu, K.N.

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Electrical Conductivity of Direct Wafer-Bonded GaAs/GaAs Structures for Wafer-Bonded Tandem Solar Cells von Yeung, King, Mc Kay, Jeffrey, Roberts, Christopher, Goorsky, M. S.

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InGaAs quantum wells on wafer-bonded InP∕GaAs substrates von Hayashi, S., Sandhu, R., Wojtowicz, M., Chen, G., Hicks, R., Goorsky, M. S.

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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride von Cheng, S.F., Woo, R.L., Noori, A.M., Malouf, G., Goorsky, M.S., Hicks, R.F.

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Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences von Yoshizawa, G., Malouf, G., Goorsky, M.S., Poust, B., Hayashi, S.

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Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs von Kuech, T.F., Goorsky, M.S., Tischler, M.A., Palevski, A., Solomon, P., Potemski, R., Tsai, C.S., Lebens, J.A., Vahala, K.J.

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy von Tischler, M.A., Potemski, R.M., Kuech, T.F., Cardone, F., Goorsky, M.S., Scilla, G.

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Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers von Goorsky, M.S., Hayashi, S., Poust, B., Heying, B.

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates von Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchick, J., Svensson, S. P.

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Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates von Oliver, James D., Somanchi, A., Orazio, F., Carlson, E.P., Emorhokpor, Ejiro, Wan, Jian Wei, Dudley, Michael, Sandhu, R., Weber, Arnd Dietrich, Jenny, Jason R., Blew, A., Basceri, C., Burkeen, F., Goorsky, M.S., Velidandla, V., Vetter, William M.

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Lattice tilt and relaxation in InGaP/GaAs/Ge solar cells on miscut substrates von Hess, R R, Moore, C D, Goorsky, M S

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X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC von Wojtowicz, M., Goorsky, M.S., Feichtinger, P., Block, T., Poust, B., Sandhu, R., Smorchkova, I.P., Heying, B.

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Processing issues for wafer bonded III-V on insulator structures von Hayashi, S., Goorsky, M.S., Sandhu, R., Wojtowicz, M.

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Misfit dislocation formation in p/p + silicon vapor-phase epitaxy von Fukuto, H., Feichtinger, P., U'Ren, G.D., Lindo, S., Goorsky, M.S., Magee, T., Oster, D., Moreland, J.

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Characterization of ternary substrate materials using triple axis X-ray diffraction von Yoon, H., Lindo, S.E., Goorsky, M.S.

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Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis von MATNEY, K, GOORSKY, M. S

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X-ray scattering techniques for the measurement of InP substrates von Goorsky, M.S., Poust, B., Noori, A., Hayashi, S., Ho, R.

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