Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation von Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., Collazo, R., Sitar, Z., Sierakowski, K., Bockowski, M., Huang, X., Wojcik, M., Goorsky, M. S.

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Strain evolution in hydrogen-implanted silicon von Miclaus, C, Goorsky, M S

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Temperature dependence of hydrogen-induced exfoliation of InP von Hayashi, S., Bruno, D., Goorsky, M. S.

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Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon von Cheng, S.F., Gao, L., Woo, R.L., Pangan, A., Malouf, G., Goorsky, M.S., Wang, K.L., Hicks, R.F.

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Thermal conductivity of nanoporous bismuth thin films von Song, D. W., Shen, W.-N., Dunn, B., Moore, C. D., Goorsky, M. S., Radetic, T., Gronsky, R., Chen, G.

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Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution von Zhang, Xi, Ren, Fei, Goorsky, M.S., Tu, K.N.

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Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity von Hayashi, S, Sandhu, R, Wojtowicz, M, Sun, Y, Hicks, R, Goorsky, M S

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Comparison of arsenide and phosphide based graded buffer layers used in inverted metamorphic solar cells von Zakaria, A., King, Richard R., Jackson, M., Goorsky, M. S.

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Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation von MICLAUS, C, MALOUF, G, JOHNSON, S. M, GOORSKY, M. S

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Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation von Zakaria, A., Hong, W., Woo, R., Goorsky, M.S.

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SiC substrate defects and III-N heteroepitaxy von Poust, B D, Koga, T S, Sandhu, R, Heying, B, Hsing, R, Wojtowicz, M, Khan, A, Goorsky, M S

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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride von Cheng, S.F., Woo, R.L., Noori, A.M., Malouf, G., Goorsky, M.S., Hicks, R.F.

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X-ray scattering techniques for assessment of III–V wafer bonding von Hayashi, S, Bruno, D, Sandhu, R, Goorsky, M S

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Wafer bonding for III-V on insulator structures von HAYASHI, S, BRUNO, D, SANDHU, R, GOORSKY, M. S

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Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications von Jackson, M., Goorsky, M. S., Noori, A., Hayashi, S., Sandhu, R., Poust, B., Chang-Chien, P., Gutierrez-Aitken, A., Tsai, R.

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High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate von Huang, F. Y., Chu, M. A., Tanner, M. O., Wang, K. L., U’Ren, G. D., Goorsky, M. S.

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Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes von Goorsky, M. S., Tanner, B. K.

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Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon von MICLAUS, C, MALOUF, G, JOHNSON, S. M, RHIGER, D. R, GOORSKY, M. S

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Compliant effect of low-temperature Si buffer for SiGe growth von Luo, Y. H., Wan, J., Forrest, R. L., Liu, J. L., Jin, G., Goorsky, M. S., Wang, K. L.

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The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters von Hayashi, S., Sandhu, R., Goorsky, M. S.

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