Plastic relaxation and relaxed buffer layers for semiconductor epitaxy von Beanland, R., Dunstan, D.J., Goodhew, P.J.

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An approach to the systematic distortion correction in aberration‐corrected HAADF images von SANCHEZ, A. M., GALINDO, P. L., KRET, S., FALKE, M., BEANLAND, R., GOODHEW, P. J.

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V-defects and dislocations in InGaN/GaN heterostructures von Sánchez, A.M., Gass, M., Papworth, A.J., Goodhew, P.J., Singh, P., Ruterana, P., Cho, H.K., Choi, R.J., Lee, H.J.

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Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra von SANCHEZ, A. M, BEANLAND, R, GASS, M. H, PAPWORTH, A. J, GOODHEW, P. J, HOPKINSON, M

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Nanoscale EELS analysis of InGaN/GaN heterostructures von SANCHEZ, A. M, GASS, M, PAPWORTH, A. J, GOODHEW, P. J, RUTERANA, P

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Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra von Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., Gass, M. H.

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Three-dimensional compositional analysis of quantum dots von Harvey, A, Davock, H, Dunbar, A, Bangert, U, Goodhew, P J

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A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy von BEANLAND, R, AINDOW, M, JOYCE, T. B, KIDD, P, LOURENCO, M, GOODHEW, P. J

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Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM von Wang, P., Bleloch, A.L., Falke, U., Goodhew, P.J.

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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers von Kidd, P., Dunstan, D.J., Colson, H.G., Louren¸o, M.A., Sacedo´n, A., Gonza´lez-Sanz, F., Gonza´lez, L., Gonza´lez, Y., Garci´a, R., Gonza´lez, D., Pacheco, F.J., Goodhew, P.J.

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On the origin of misfit dislocations in InGaAs/GaAs strained layers von DIXON, R. H, GOODHEW, P. J

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Striation development in CBE-grown vicinal plane InGaAs layers von Giannakopoulos, K.P, Goodhew, P.J

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RAYMOND EDWARD SMALLMAN CBE FREng: 4 August 1929 — 25 February 2015 von Goodhew, P. J.

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Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Can+1MnnO3n+1 von Wang, P, Bleloch, A L, Yan, L, Niu, H J, Chalker, P R, Rosseinsky, M J, Goodhew, P J

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A model of dislocation blocking and its application to the development of misfit dislocation arrays von Goodhew, P. J.

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Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring von Joyce, T.B., Westwater, S.P., Goodhew, P.J., Pritchard, R.E.

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Influence of the surface morphology on the relaxation of low-strained InxGa1-xAs linear buffer structures von VALTUENA, J. F, SACEDON, A, MOLINA, S. I, ALVAREZ, A. L, IZPURA, I, CALLE, F, CALLEJA, E, MACPHERSON, G, GOODHEW, P. J, PACHECO, F. J, GARCIA, R

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Low-temperature laser assisted CBE-growth of AlGaAs von Jothilingam, R, Farrell, T, Joyce, T.B, Goodhew, P.J

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Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy von Zhi, D., Davock, H., Murray, R., Roberts, C., Jones, T. S., Pashley, D. W., Goodhew, P. J., Joyce, B. A.

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CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors von JOYCE, T. B, BULLOUGH, T. J, KIGHTLEY, P, KIELY, C. J, XING, Y. R, GOODHEW, P. J

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