Treffer 1 - 10 von 10 für Suche 'Goo, Heejae', Suchdauer: 0,47s Treffer weiter einschränken
  1. 1
    Current Monitoring-based Diagnosis of Drive Belt Degradation in Wafer-handling Robots

    Current Monitoring-based Diagnosis of Drive Belt Degradation in Wafer-handling Robots von Goo, Heejae, Lee, Geunil, Kwon, Daeil


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  2. 2
    METHOD AND APPARATUS FOR PROCESSING SUBSTRATE

    METHOD AND APPARATUS FOR PROCESSING SUBSTRATE von GOO, HEEJAE, CHOI, BYOUNGDOO, YOON, KYO SANG, YANG, SANGMO

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  3. 3
    substrate processing apparatus

    substrate processing apparatus von JEON JAE SIK, KIM DAESUNG, GOO HEEJAE

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  4. 4
    Unit for supplying liquid Apparatus and Method for treating substrate

    Unit for supplying liquid Apparatus and Method for treating substrate von PARK EUNWOO, KIM DAESUNG, GOO HEEJAE, YOON KYO SANG

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  5. 5
    Method and apparatus for treating substrate

    Method and apparatus for treating substrate von CHOI BYOUNGDOO, GOO HEEJAE, YANG SANGMO, YOON KYO SANG

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  6. 6
    Method and apparatus for treating substrate

    Method and apparatus for treating substrate von CHOI BYOUNGDOO, GOO HEEJAE, YANG SANGMO, YOON KYO SANG

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  7. 7
    Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

    Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates von Moon, Sung-Woon, Twynam, John, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Roh, Sungwon D.

    Veröffentlicht in Solid-state electronics

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  8. 8
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.


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  9. 9
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.


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  10. 10
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN sub(x) surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN sub(x) surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D


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