Variability in Resistive Memories von Roldán, Juan B., Miranda, Enrique, Maldonado, David, Mikhaylov, Alexey N., Agudov, Nikolay V., Dubkov, Alexander A., Koryazhkina, Maria N., González, Mireia B., Villena, Marco A., Poblador, Samuel, Saludes-Tapia, Mercedes, Picos, Rodrigo, Jiménez-Molinos, Francisco, Stavrinides, Stavros G., Salvador, Emili, Alonso, Francisco J., Campabadal, Francesca, Spagnolo, Bernardo, Lanza, Mario, Chua, Leon O.

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Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories von Aguilera-Pedregosa, Cristina, Maldonado, David, González, Mireia B, Moreno, Enrique, Jiménez-Molinos, Francisco, Campabadal, Francesca, Roldán, Juan B

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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks von Vinuesa, Guillermo, García, Héctor, González, Mireia B., Kalam, Kristjan, Zabala, Miguel, Tarre, Aivar, Kukli, Kaupo, Tamm, Aile, Campabadal, Francesca, Jiménez, Juan, Castán, Helena, Dueñas, Salvador

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Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni-HfO2-Si Capacitors von Vaca, Cesar, Gonzalez, Mireia B., Castan, Helena, Garcia, Hector, Duenas, Salvador, Campabadal, Francesca, Miranda, Enrique, Bailon, Luis A.

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Transmission electron microscopy assessment of conductive-filament formation in Ni-HfO2-Si resistive-switching operational devices von Martín, Gemma, González, Mireia B., Campabadal, Francesca, Peiró, Francesca, Cornet, Albert, Estradé, Sònia

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Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices von Garcia, Hector, Boo, Jonathan, Vinuesa, Guillermo, G. Ossorio, Oscar, Sahelices, Benjamin, Duenas, Salvador, Castan, Helena, Gonzalez, Mireia B., Campabadal, Francesca

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Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

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Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices von Poblador, Samuel, Maestro-Izquierdo, Marcos, Zabala, Miguel, González, Mireia B., Campabadal, Francesca

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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge von García, Héctor, Vinuesa, Guillermo, Ossorio, Óscar G., Sahelices, Benjamín, Castán, Helena, Dueñas, Salvador, González, Mireia B., Campabadal, Francesca

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Impact of the temperature on the conductive filament morphology in HfO2-based RRAM von Vinuesa, Guillermo, García, Héctor, Poblador, Samuel, González, Mireia B., Campabadal, Francesca, Castán, Helena, Dueñas, Salvador

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Reset transition in HfO2-Based memristors using a constant power signal von García, Héctor, Vinuesa, Guillermo, González, Mireia B., Campabadal, Francesca, Castán, Helena, Dueñas, Salvador

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New method to analyze random telegraph signals in resistive random access memories von González-Cordero, Gerardo, González, Mireia B., Jiménez-Molinos, Francisco, Campabadal, Francesca, Roldán, Juan Bautista

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Resistive Switching Studies of ReRAM Devices by In-Situ TEM von Martín, Gemma, González, Mireia B., Varea, Aïda, Blázquez, Oriol, Vescio, Giovanni, Campabadal, Francesca, Hernández, Sergi, Cirera, Albert, Garrido, Blas, Estradé, Sònia, Peiró, Francesca, Cornet, Albert

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Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs von Maldonado, David, Gonzalez, Mireia B., Campabadal, Francesca, Jimenez-Molinos, Francisco, Chawa, M. Moner Al, Stavrinides, Stavros G., Roldan, Juan B., Tetzlaff, Ronald, Picos, Rodrigo, Chua, Leon O.

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On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices von Stavrinides, Stavros G., Hanias, Michael P., Gonzalez, Mireia B., Campabadal, Francesca, Contoyiannis, Yiannis, Potirakis, Stelios M., Al Chawa, Mohamad Moner, de Benito, Carol, Tetzlaff, Ronald, Picos, Rodrigo, Chua, Leon O.

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RRAM serial configuration for the generation of random bits von Arumí, D., Gonzalez, M.B., Campabadal, F.

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Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO 2 –Si Capacitors von Vaca, Cesar, Gonzalez, Mireia B., Castan, Helena, Garcia, Hector, Duenas, Salvador, Campabadal, Francesca, Miranda, Enrique, Bailon, Luis A.

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Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs von Tsunoda, Isao, Hori, Masato, Takakura, Kenichiro, Nakashima, Toshiyuki, Simoen, Eddy, Claeys, Cor, Yoneoka, Masashi, Asai, Yuki, Gonzalez, Mireia B.

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Evaluation of Degradation due to Electron Irradiation of Si sub(1-x)C sub(x) S/D n-type MOSFETs von Hori, Masato, Asai, Yuki, Yoneoka, Masashi, Tsunoda, Isao, Takakura, Kenichiro, Nakashima, Toshiyuki, Gonzalez, Mireia B, Simoen, Eddy, Claeys, Cor

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Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO 2 –Si resistive-switching operational devices von Martín, Gemma, González, Mireia B., Campabadal, Francesca, Peiró, Francesca, Cornet, Albert, Estradé, Sònia

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