Performance of standard and double-sided 3D-radiation detectors under the impact of a temperature pulse von Abouelatta, M, Shaker, A, Gontrand, C, Ossaimee, M

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Phase noise modeling in LC oscillators implemented in SiGe technology von Bouhouche, M., Latreche, S., Gontrand, C.

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Design of complementary LDMOS in 0.35 [micro]m BiCMOS technology for smart integration von Abouelatta-Ebrahim, M, Gontrand, C, Zekry, A

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A Simple Way for Substrate Noise Modeling in Mixed-Signal ICs von Valorge, O., Andrei, C., Calmon, F., Verdier, J., Gontrand, C., Dautriche, P.

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Modelling of parasitic effects induced by electrically active defects in a SiGe HBT von Lakhdara, M., Latreche, S., Gontrand, C.

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Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing von Merabet, A., Gontrand, C.

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L'integration de puissance: l'origine des effets parasites induits par un transistor bipolaire à grille isolée sur sa logique de commande et de protection von Chauvet, D, Calmon, F, Gontrand, C

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Design of complementary LDMOS in 0.35 μm BiCMOS technology for smart integration von Abouelatta-Ebrahim, M., Gontrand, C., Zekry, A.

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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors von Rechem, D., Latreche, S., Gontrand, C.

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Matrix method to determine a steady solution of the Boltzmann equation in III-V compound semiconductors von GONTRAND, C

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Effet tunnel dans la diode émetteur/base d'un transistor bipolaire compatible CMOS dédié à la RF von LATRECHE, S, GONTRAND, C

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Design and characterization of high voltage devices integrated in a standard CMOS technology von Villard, B., Calmon, F., Gontrand, C.

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A high-performance lateral PNP transistor structure von Gradinariu, I., Gontrand, C.

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Volume and grain boundary diffusivity of boron in polycrystalline silicon during rapid thermal annealing von Merabet, A, Gontrand, C

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Procédés thermiques rapides pour la fabrication de structures bipolaires dédiées à la ULSI von Merabet, A., Haddab, Y., Gontrand, C.

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About boron and arsenic diffusions in polycrystalline silicon under rapid thermal oxidation von Semmache, B., Merabet, A., Gontrand, C., Laugier, A.

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A new model for codiffusion in polycrystalline silicon specified to BiCMOS technology von Gontrand, C, Haddab, Y, Kaabi, L, Merabet, A

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FPGA and Mixed FPGA-DSP Implementations of Electrical Drive Algorithms von Calmon, F., Fathallah, M., Viverge, P.J., Gontrand, C., Carrabina, J., Foussier, P.

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Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization von Kaabi, L., Gontrand, C., Pinard, P., Balland, B., Remaki, B., Gamoudi, M., Guillaud, G.

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Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling von Abouelatta-Ebrahim, M, Gontrand, C, Zekry, A

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