Effect of oxygen vacancy on the dielectric relaxation of BaTiO 3 thin films in a quenched state von Yao, Sheng-Hong, Yuan, Jin-Kai, Gonon, Patrice, Bai, Jinbo, Pairis, Sébastien, Sylvestre, Alain

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Demonstrating the Ultrathin Metal-Insulator- Metal Diode Using TiN/ZrO2-Al2O3-ZrO2 Stack by Employing RuO2 Top Electrode von Jeon, Woojin, Kim, Youngjin, An, Cheol Hyun, Hwang, Cheol Seong, Gonon, Patrice, Vallee, Christophe

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REALIZATION OF A CONDUCTIVE BRIDGING RF SWITCH INTEGRATED ONTO PRINTED CIRCUIT BOARD von Perret, Etienne, Vidal, Thais, Vena, Arnaud, Gonon, Patrice

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An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO 2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal Capacitor von Han, Dong Hee, Lee, Seungwoo, Hwang, Ji Hyeon, Kim, Youngjin, Bonvalot, Marceline, Vallee, Christophe, Gonon, Patrice, Jeon, Woojin

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Resistance switching in HfO2 metal-insulator-metal devices von Gonon, P., Mougenot, M., Vallée, C., Jorel, C., Jousseaume, V., Grampeix, H., El Kamel, F.

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Charge transport and relaxation in hydrogenated barium titanate films and their potential for integrated supercapacitors von El Kamel, Fadhel, Gonon, Patrice

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Dielectric response of an epoxy resin when exposed to high temperatures von BOUDEFEL, A, GONON, P

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Demonstrating the Ultrathin Metal–Insulator– Metal Diode Using TiN/ZrO 2 –Al 2 O 3 –ZrO 2 Stack by Employing RuO 2 Top Electrode von Jeon, Woojin, Kim, Youngjin, An, Cheol Hyun, Hwang, Cheol Seong, Gonon, Patrice, Vallee, Christophe

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Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO2 Thin Films for MIM Capacitors von Chaker, Ahmad, Bermond, Cedric, Artillan, Philippe, Gonon, Patrice, Vallee, Christophe, Bsiesy, Ahmad

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From MEMRISTOR to MEMImpedance device von Wakrim, T., Vallée, C., Gonon, P., Mannequin, C., Sylvestre, A.

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Rutile-structured TiO{sub 2} deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode von Pointet, John, Gonon, Patrice, Latu-Romain, Lawrence, Bsiesy, Ahmad, Vallée, Christophe

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Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors von Chaker, Ahmad, Bermond, Cedric, Artillan, Philippe, Gonon, Patrice, Vallee, Christophe, Bsiesy, Ahmad

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Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors von Vallée, C., Gonon, P., Jorel, C., El Kamel, F.

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Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode von Pointet, John, Gonon, Patrice, Latu-Romain, Lawrence, Bsiesy, Ahmad, Vallée, Christophe

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High performance metal-insulator-metal capacitor using a SrTiO(3)/ZrO(2) bilayer von Jorel, Corentin, Vallée, Christophe, Gonon, Patrice, Gourvest, E., Dubarry, Christophe, Defay, Emmanuel

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Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3:H von El Kamel, F., Gonon, P., Jomni, F., Yangui, B.

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High-density capacitors based on amorphous BaTiO3 layers grown under hydrogen containing atmosphere von Gonon, Patrice, El Kamel, Fadhel

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(Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories von Bsiesy, Ahmad, Gonon, Patrice, Vallée, Christophe, Pointet, John, Mannequin, Cédric

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors von BERTAUD, Thomas, BLONKOWSKI, Serge, BERMOND, Cédric, VALLEE, Christophe, GONON, Patrice, GROS-JEAN, Michaël, FLECHET, Bernard

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Dielectric properties of amorphous BaTiO3 films deposited by RF magnetron sputtering von KAMEL, F. El, GONON, P, JOMNI, F, YANGUI, B

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