ZnO Inverse Opals by Chemical Vapor Deposition von Juárez, B. H., García, P. D., Golmayo, D., Blanco, A., López, C.

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Selective Formation of Inverted Opals by Electron-Beam Lithography von Juárez, B. H., Golmayo, D., Postigo, P. A., López, C.

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Tuning of spontaneous emission of two-dimensional photonic crystal microcavities by accurate control of slab thickness von Alija, A. R., Martínez, L. J., García-Martín, A., Dotor, M. L., Golmayo, D., Postigo, P. A

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Optical anisotropy of synthetic opals von Rėza, A., Šimkienė, I., Vaišnoras, R., Lopez, C., Golmayo, D., Babonas, J.

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Lateral composition modulation in strain compensated (GaInP) m(GaInAs) m short-period superlattices grown on (0 0 1) InP by atomic layer molecular beam epitaxy von Golmayo, D., Dotor, M.L., Quintana, C.

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Transmittance photoplethysmography with near-infrared laser diodes in intra-peritoneal organs von López-Silva, S M, Silveira, J P, Dotor, M L, Giannetti, R, Golmayo, D, Herrera, L

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Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy von Postigo, P. A., Dotor, M. L., Garcı́a, F., Golmayo, D., Briones, F.

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Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP von DOTOR, M. L, QUINTANA, C, GOLMAYO, D

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Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy von Quintana, C., Golmayo, D., Dotor, M. L., Lancin, M.

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Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy von Postigo, P. A., Dotor, M. L., Huertas, P., Golmayo, D., Briones, F.

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Observation of dislocation generation in highly strained quantum well lasers during operation von Mazuelas, A, Dotor, M L, Golmayo, D, Zeimer, U, Baumbach, T, Luebbert, D, Grenzer, J, Baruchel, J

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Different catalytic metals (Pt, Pd and Ir) for GaAs Schottky barrier sensors von Lechuga, L.M., Calle, A., Golmayo, D., Briones, F.

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Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy von Postigo, P. A., Dotor, M. L., Huertas, P., Garcı́a, F., Golmayo, D., Briones, F.

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The ammonia sensitivity of Pt/GaAs Schottky barrier diodes von LECHUGA, L. M, CALLE, A, GOLMAYO, D, BRIONES, F

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Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis von Aranovich, J A, Golmayo, D, Fahrenbruch, A L, Bube, R H

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Hydrogen sensor based on a Pt/GaAs Schottky diode von Lechuga, L.M., Calle, A., Golmayo, D., Briones, F.

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Ga0.47In053As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In0.53As)m short period superlattices lattice-matched to InP von DOTOR, M. L, HUERTAS, P, GOLMAYO, D, BRIONES, F

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Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide von DOTOR, M. L, RECIO, M, GOLMAYO, D, BRIONES, F

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Luminescence and photocurrent spectroscopy of self-assembled InAs quantum wires on InP[001] von Suarez, F., Wang, W., Fuster, D., Gonzalez, L., Gonzalez, Y., Golmayo, D., Garcia, J.M., Dotor, M.L.

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(Ga 0.22In 0.78As) m⧸(Ga 0.22In 0.78P) m superlattices grown by atomic-layer molecular beam epitaxy on InP von Dotor, M.L., Golmayo, D., Briones, F.

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