Increased capillary permeability induced by human follicular fluid: a hypothesis for an ovarian origin of the hyperstimulation syndrome von Goldsman, Monica P., Pedram, Ali, Dominguez, Celia E., Ciuffardi, Italo, Levin, Ellis, Asch, Ricardo H.

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Continuous indexing of hierarchical subdivisions of the globe von Bartholdi, John J., Goldsman, Paul

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Multiresolution indexing of triangulated irregular networks von Bartholdi, J.J., Goldsman, P.

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Outcome of triplet pregnancies after assisted reproductive techniques: How frequent are the vanishing embryos? von Manzur, Alenjandro, Goldsman, Monica P., Stone, Stergio C., Frederick, Jane L., Balmaceda, Jose P., Asch, Ricardo H.

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Vertex-labeling algorithms for the Hilbert spacefilling curve von Bartholdi III, John J., Goldsman, Paul

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The vertex-adjacency dual of a triangulated irregular network has a Hamiltonian cycle von Bartholdi III, John J., Goldsman, Paul

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Reservation storage policy for AS/RS at air cargo terminals von Chulung Lee, Huei Chuen Huang, Goldsman, P., Bin Liu, Zhiyong Xu

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Reservation storage policy for AS/RS at air cargo terminals von Lee, Chulung, Huang, Huei Chuen, Goldsman, Paul, Liu, Bin, Xu, Zhiyong

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Etiology of ovarian hyperstimulation syndrome? von Orvieto, Raoul, Ben-Rafael, Zion

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Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors von Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J.

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A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors von Ettisserry, D. P., Goldsman, N., Lelis, A.

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Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces von Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J.

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The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface von Salemi, S., Goldsman, N., Ettisserry, D. P., Akturk, A., Lelis, A.

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Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs von Ettisserry, Devanarayanan P., Goldsman, Neil, Lelis, Aivars J.

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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques von Gurfinkel, Moshe, Xiong, Hao D., Cheung, Kin P., Suehle, John S., Bernstein, Joseph B., Shapira, Yoram, Lelis, Aivars J., Habersat, Daniel, Goldsman, Neil

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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation von Akturk, A, Holloway, M, Potbhare, S, Gundlach, D, Li, B, Goldsman, N, Peckerar, M, Cheung, K P

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study von Ettisserry, Devanarayanan, Akturk, Akin, Lelis, Aivars J., Goldsman, Neil

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study von Ettisserry, D P, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J

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Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics von Lelis, Aivars J., Goldsman, Neil, Green, Ronald, Habersat, Daniel B.

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Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge von Lelis, Aivars J., Goldsman, Neil, Potbhare, Siddharth, Habersat, Daniel B.

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