Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures von Goldman, E. I., Levashov, S. A., Naryshkina, V. G., Chucheva, G. V.

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Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide von Goldman, E. I., Levashova, A. I., Levashov, S. A., Chucheva, G. V.

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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characterist... von Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., Chucheva, G. V.

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Direct tunneling of electrons in Al-[n.sup.+]-Si-Si[O.sub.2]-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carrier... von Goldman, E.I, Gulyaev, Yu. V, Zhdan, A.G, Chucheva, G.V

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim... von Goldman, E.I., Kukharskaya, N.F., Zhdan, A.G.

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M DETERMINING PARAMETERS OF BORDER STATES AT SEMICONDUCTOR-DIELECTRIC INTERFACE von VEDENEEV A.S.,SU, KUZNETSOV A.V.,SU, GOLDMAN E.I.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINATION OF BOUNARY STATE PARAMETERS ON SOLID BODY SEPARATION BOUNDRY von FILIPPOV V.E.,SU, GULYAEV I.B.,SU, PRIKHODKO V.G.,SU, GOLDMAN E.I.,SU, ZHDAN A.G.,SU

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Способ производства копченых колбас von MAKEEVA M.N, SMUROV A.P, KASHIRINA V.M, GOLDMAN E.I

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A theoretical interpretation of exploding pusher laser fusion experiments von Goldman, E.B, Delettrez, J.A, Thorsos, E.I

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UNINTERRAPTED METHOD FOR HIGH-IMPACT POLYSTYRENE PRODUCTION von BALLOVA G.D, RUPYSHEV V.G, EGOROVA E.I, GOLDMAN A.YA, ROZHAVSKIJ M.G, TARKOVA E.M, GINZBURG L.I

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