Current flow mechanism in ohmic contact to n-4H-SiC von Blank, T. V., Goldberg, Yu. A., Posse, E. A., Soldatenkov, F. Yu

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Mechanisms of current flow in metal-semiconductor ohmic contacts von Blank, T. V., Gol’dberg, Yu. A.

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Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide von Blank, T. V., Goldberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.

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Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors von Blank, T V, Goldberg, Yu A

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Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration von Bessolov, V. N., Blank, T. V., Goldberg, Yu. A., Konstantinov, O. V., Posse, E. A.

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Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors von Blank, T V, Goldberg, Yu A, Kalinina, E V, Konstantinov, O V, Konstantinov, A O, Hallén, A

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Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contact von Blank, T. V., Goldberg, Yu. A., Kalinina, E. V., Konstantinov, O. V., Nikolaev, A. E., Fomin, A. V., Cherenkov, A. E.

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4H-SiC-based photodetector of Carcinogenic UV radiation von Blank, T. V., Goldberg, Yu. A., Kalinina, E. V., Konstantinov, O. V.

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An instrument for measuring the intensity and dose of cancerigenic ultraviolet radiation von Blank, T. V., Gol’dberg, Yu. A., Kalinina, E. V., Karpenko, A. N.

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The mechanism of current flow in an alloyed In-GaN ohmic contact von Blank, T. V., Gol’dberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.

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Mechanism of current flow in alloyed ohmic In/GaAs contacts von Blank, T. V., Gol’dberg, Yu. A., Konstantinov, O. V., Nikitin, V. G., Posse, E. A.

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Semiconductor near-ultraviolet photoelectronics von Goldberg, Yu A

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Semiconductor photoelectric converters for the ultraviolet region of the spectrum von Blank, T. V., Gol’dberg, Yu. A.

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Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes von Goldberg, Yu A, Konstantinov, O V, Obolensky, O I, Petelina, T V, Posse, E A

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Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors von Blank, T. V., Goldberg, Yu. A., Posse, E. A.

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Temperature dependence of the quantum efficiency of silicon p−n photodiodes von Goldberg, Yu. A.

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Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes von Goldberg, Yu. A., Posse, E. A.

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A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes von Goldberg, Yu. A., Konstantinov, O. V., Lantratov, V. M., Obolensky, O. I., Petelina, T. V., Posse, E. A., Shvarts, M. Z.

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Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors von BLANK, T. V, GOLDBERG, Yu. A

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The ultraviolet radiation detectors based on wide-bandgap Schottky barrier structures von Blank, T.V., Goldberg, Yu.A., Konstantinov, O.V.

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