Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology von Gao, Shaochen, Duc-Tung Vu, Cazimajou, Thibauld, Pittet, Patrick, Martine Le Berre, Lakeh, Mohammadreza Dolatpoor, Mandorlo, Fabien, Orobtchouk, Régis, Schell, Jean-Baptiste, Kammerer, Jean-Baptiste, Cathelin, Andreia, Golanski, Dominique, Uhring, Wilfried, Calmon, Francis

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A band-modulation device in advanced FDSOI technology: Sharp switching characteristics von El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin

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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices von Helleboid, Remi, Rideau, Denis, Grebot, Jeremy, Nicholson, Isobel, Moussy, Norbert, Saxod, Olivier, Basset, Marie, Zimmer, Antonin, Mamdy, Bastien, Golanski, Dominique, Agnew, Megan, Pellegrini, Sara, Sicre, Mathieu, Buj, Christel, Marchand, Guillaume, Saint-Martin, Jerome, Pala, Marco, Dollfus, Philippe

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High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI von Quemerais, Thomas, Gloria, Daniel, Golanski, Dominique, Bouvot, Simon

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A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes von Helleboid, Rémi, Rideau, Denis, Nicholson, Isobel, Grebot, Jeremy, Mamdy, Bastien, Mugny, Gabriel, Basset, Marie, Agnew, Megan, Golanski, Dominique, Pellegrini, Sara, Saint-Martin, Jérôme, Pala, Marco, Dollfus, Philippe

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An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration von Chaves De Albuquerque, Tulio, Issartel, Dylan, Gao, Shaochen, Benhammou, Younes, Golanski, Dominique, Clerc, Raphaël, Calmon, Francis

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EDMOS in ultrathin FDSOI: Impact of the drift region properties von Litty, Antoine, Ortolland, Sylvie, Golanski, Dominique, Dutto, Christian, Cristoloveanu, Sorin

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Dual Ground Plane for high-voltage MOSFET in UTBB FDSOI technology von Litty, Antoine, Ortolland, Sylvie, Golanski, Dominique, Cristoloveanu, Sorin

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Dual Ground Plane EDMOS in 28nm FDSOI for 5V power management applications von Litty, Antoine, Ortolland, Sylvie, Golanski, Dominique, Cristoloveanu, Sorin

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Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology von Chaves de Albuquerque, Tulio, Issartel, Dylan, Clerc, Raphaël, Pittet, Patrick, Cellier, Rémy, Golanski, Dominique, Jouan, Sébastien, Cathelin, Andreia, Calmon, Francis

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SPAD PHOTODIODE von ZIMMER, Antonin, BIANCHI, Raul Andres, GOLANSKI, Dominique

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SPAD photodiode von Zimmer, Antonin, Bianchi, Raul Andres, Golanski, Dominique

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SINGLE PHOTON AVALANCHE DIODE von LOPEZ, Alexandre, PELLEGRINI, Sara, GOLANSKI, Dominique

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SINGLE PHOTON AVALANCHE DIODE von LOPEZ, Alexandre, PELLEGRINI, Sara, GOLANSKI, Dominique

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Improved modeling of isolated EDMOS in advanced CMOS technologies von Litty, Antoine, Ortolland, Sylvie, Cristoloveanu, Sorin, Ros, Helene Beckrich, Golanski, Dominique

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SINGLE-PHOTON AVALANCHE PHOTODIODE von RIDEAU, Denis, GOLANSKI, Dominique, BENHAMMOU, Younes

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Single-photon avalanche photodiode von Rideau, Denis, Benhammou, Younes, Golanski, Dominique

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AVALANCHE PHOTODIODE von ZIMMER, Antonin, GOLANSKI, Dominique, PLACE, Sebastien, MARCHAND, Guillaume

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INTEGRATED CIRCUIT COMPRISING A SINGLE PHOTON AVALANCHE DIODE AND CORRESPONDING MANUFACTURING METHOD von LOPEZ, Alexandre, RIDEAU, Denis, GOLANSKI, Dominique, MUGNY, Gabriel

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SPAD PHOTODIODE von ZIMMER, Antonin, BIANCHI, Raul Andres, GOLANSKI, Dominique

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