Realization of Atomically Controlled Dopant Devices in Silicon von Rueß, Frank J., Pok, Wilson, Reusch, Thilo C. G., Butcher, Matthew J., Goh, Kuan Eng J., Oberbeck, Lars, Scappucci, Giordano, Hamilton, Alex R., Simmons, Michelle Y.

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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy von Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G

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Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy von Goh, Kuan Eng J, Bannani, A, Troadec, C

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Electrically-Excited Surface Plasmon Polaritons with Directionality Control von Dong, Zhaogang, Chu, Hong-Son, Zhu, Di, Du, Wei, Akimov, Yuriy A, Goh, Wei Peng, Wang, Tao, Goh, Kuan Eng J, Troadec, C, Nijhuis, Christian A, Yang, Joel K. W

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One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy von Rueß, Frank J., Weber, Bent, Goh, Kuan Eng J., Klochan, Oleh, Hamilton, Alex R., Simmons, Michelle Y.

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Electrostatic effects of nanoscale dielectric patches in the modification of Schottky contacts von Song, Justin C. W., Goh, Kuan Eng J., Chandrasekhar, Natarajan, Troadec, Cedric

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Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier von Lim, Yee-Fun, Priyadarshi, Kumar, Bussolotti, Fabio, Gogoi, Pranjal Kumar, Cui, Xiaoyang, Yang, Ming, Pan, Jisheng, Tong, Shi Wun, Wang, Shijie, Pennycook, Stephen J, Goh, Kuan Eng Johnson, Wee, Andrew T. S, Wong, Swee Liang, Chi, Dongzhi

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Single layer MoS2 nanoribbon field effect transistor von Kotekar-Patil, D., Deng, J., Wong, S. L., Lau, Chit Siong, Goh, Kuan Eng Johnson

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Electron transport chain capacity expands yellow fever vaccine immunogenicity von Mok, Darren ZL, Tng, Danny JH, Yee, Jia Xin, Chew, Valerie SY, Tham, Christine YL, Ooi, Justin SG, Tan, Hwee Cheng, Zhang, Summer L, Lin, Lowell Z, Ng, Wy Ching, Jeeva, Lavanya Lakshmi, Murugayee, Ramya, Goh, Kelvin K-K, Lim, Tze-Peng, Cui, Liang, Cheung, Yin Bun, Ong, Eugenia Z, Chan, Kuan Rong, Ooi, Eng Eong, Low, Jenny G

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Modification of Vapor Phase Concentrations in MoS 2 Growth Using a NiO Foam Barrier von Lim, Yee-Fun, Priyadarshi, Kumar, Bussolotti, Fabio, Gogoi, Pranjal Kumar, Cui, Xiaoyang, Yang, Ming, Pan, Jisheng, Tong, Shi Wun, Wang, Shijie, Pennycook, Stephen J, Goh, Kuan Eng Johnson, Wee, Andrew T S, Wong, Swee Liang, Chi, Dongzhi

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Comparison of GaP and PH3 as dopant sources for STM-based device fabrication von Goh, Kuan Eng Johnson, Oberbeck, L, Butcher, M J, Curson, N J, Rueß, F J, Simmons, M Y

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Comparison of GaP and PH 3 as dopant sources for STM-based device fabrication von Goh, Kuan Eng Johnson, Oberbeck, L, Butcher, M J, Curson, N J, Rueß, F J, Simmons, M Y

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Single layer MoS2 nanoribbon field effect transistor von Kotekar-Patil, D, Deng, J, Wong, S L, Lau, Chit Siong, Kuan Eng Johnson Goh

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Atomically precise silicon device fabrication von Simmons, M.Y., Ruess, F.J., Pok, W., Thompson, D.L., Fuchsle, M., Scappucci, G., Reusch, T.C.G., Goh, K.-E.J., Schofield, S.R., Weber, B., Oberbeck, L., Hamilton, A.R., Ratto, F.

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