Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si von Muller, D. A, Voyles, P. M, Grazul, J. L, Citrin, P. H, Gossmann, H.-J. L

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4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing von Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Hatem, C., Kim, H., Jones, K. S.

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The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing von Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Kim, H., Pearton, S.J., Jones, K.S.

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition von Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Chu, S. N. G., Nakahara, S., Gossmann, H.-J. L., Mannaerts, J. P., Hong, M., Ng, K. K., Bude, J.

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p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing von Li, C. I., Breil, N., Wen, T. Y., Liu, S. Y., Hsieh, M. S., Yen, S. J., Chang, C. W., Tsai, S. H., Gossmann, H., Guo, B. N., Shim, K. H., Variam, N., Tang, S., Wang, C., Salimian, S., Nejad, H., Sharma, S., Wen, J., Khaja, F. A., Hollar, K., Ng, B., Nagy, S., Hung, R., Hou, M., Chen, S., Kuo, J., Liao, D., Chudzik, M., Yang, N. H., Hung, G. C., Hsu, S. C., Wu, J. Y.

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy von RUMMUKAINEN, M, MAKKONEN, I, RANKI, V, PUSKA, M. J, SAARINEN, K, GOSSMANN, H.-J. L

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition von Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Gossmann, H.-J. L., Hong, M., Ng, K. K., Bude, J.

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling von Pelaz, Lourdes, Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Implantation and transient B diffusion in Si: The source of the interstitials von Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Poate, J. M.

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Carbon in silicon: Modeling of diffusion and clustering mechanisms von Pinacho, R., Castrillo, P., Jaraiz, M., Martin-Bragado, I., Barbolla, J., Gossmann, H.-J., Gilmer, G.-H., Benton, J.-L.

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors von Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

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Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond von Wood, Bingxi Sun, Khaja, Fareen Adeni, Colombeau, Benjamin P, Sun, Shiyu, Waite, Andrew, Jin, Miao, Chen, Hao, Chan, Osbert, Thanigaivelan, Thirumal, Pradhan, Nilay, Gossmann, Hans-Joachim L, Sharma, Shashank, Chavva, Venkataramana R, Cai, Man-Ping, Okazaki, Motoya, Munnangi, Samuel Swaroop, Ni, Chi-Nung, Suen, Wesley, Chang, Chorng-Ping, Mayur, Abhilash, Variam, Naushad, Brand, Adam D

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling von Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

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Benefits of cryo-implantation for 28 nm NMOS advanced junction formation von Yang, C L, Li, C I, Lin, G P, Liu, R, Hsu, B C, Chan, M, Wu, J Y, Colombeau, B, Guo, B N, Gossmann, H J, Wu, T, Feng, W, Sun, H L, Lu, S

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Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation von Szpala, S, Asoka-Kumar, P, Nielsen, B, Peng, JP, Hayakawa, S, Lynn, KG, Gossmann, H

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Boron-enhanced diffusion of boron from ultralow-energy ion implantation von Agarwal, Aditya, Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., Haynes, T. E.

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On the FinFET extension implant energy von Gossmann, H.-J.L., Agarwal, A., Parrill, T., Rubin, L.M., Poate, J.M.

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Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100) von EAGLESHAM, D. J, GOSSMANN, H.-J, CERULLO, M

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