TCAD Modeling of high-field electron transport in bulk wurtzite GaN: the full-band SHE-BTE von Balestra, Luigi, Ercolano, Franco, Gnani, Elena, Reggiani, Susanna

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Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs von Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation von Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors von Reggiani, S., Barone, G., Poli, S., Gnani, E., Gnudi, A., Baccarani, G., Ming-Yeh Chuang, Weidong Tian, Wise, R.

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation von Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.

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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors von Reggiani, S., Poli, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.

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Characterization and modeling of electrical stress degradation in STI-based integrated power devices von Reggiani, Susanna, Barone, Gaetano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Poli, Stefano, Wise, Rick, Chuang, Ming-Yeh, Tian, Weidong, Pendharkar, Sameer, Denison, Marie

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Semianalytical quantum model for graphene field-effect transistors von Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Quasi-Ballistic Transport in Nanowire Field-Effect Transistors von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure von Balestra, Luigi, Gnani, Elena, Reggiani, Susanna

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Electron effective masses of Sc x Al1− x N and Al x Ga1− x N from first-principles calculations of unfolded band structure von Balestra, Luigi, Gnani, Elena, Reggiani, Susanna

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Optimization of n- and p-type TFETs Integrated on the Same / Technology Platform von Baravelli, Emanuele, Gnani, Elena, Grassi, Roberto, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs von Balestra, Luigi, Gnani, Elena, Rossetti, Mattia, Depetro, Riccardo, Reggiani, Susanna

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Theory of the Junctionless Nanowire FET von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors von Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.

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Theoretical foundations of the quantum drift-diffusion and density-gradient models von Baccarani, Giorgio, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Rudan, Massimo

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Group velocity of electrons in 4H-SiC from Density Functional Theory simulations von Balestra, Luigi, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio

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TCAD Simulation Framework of Gas Desorption in CNT FET NO2 Sensors von Carapezzi, Stefania, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio

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Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation von Giuliano, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rossetti, Mattia, Depetro, Riccardo

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Breakdown-Voltage Degradation Under AC Stress of Thick SiO 2 Capacitors for Galvanic Insulation von Giuliano, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rossetti, Mattia, Depetro, Riccardo

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