Behaviour of group IIIA impurities in PbTe: implications to improve thermoelectric efficiency von Xiong, K, Lee, G, Gupta, R P, Wang, W, Gnade, B E, Cho, Kyeongjae

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Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition von Salas-Villasenor, A. L., Mejia, I., Sotelo-Lerma, M., Gnade, B. E, Quevedo-Lopez, M. A.

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Mechanisms behind green photoluminescence in ZnO phosphor powders von Vanheusden, K., Warren, W. L., Seager, C. H., Tallant, D. R., Voigt, J. A., Gnade, B. E.

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Interface characterization of nickel contacts to bulk bismuth tellurium selenide von Iyore, O. D., Lee, T. H., Gupta, R. P., White, J. B., Alshareef, H. N., Kim, M. J., Gnade, B.E.

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Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer von Fuentes-Fernandez, E. M. A., Salomon-Preciado, A. M., Gnade, B. E., Quevedo-Lopez, M. A., Shah, P., Alshareef, H. N.

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Adsorption Kinetics of p-Nitrobenzenethiol Self-Assembled Monolayers on a Gold Surface von Jakubowicz, A, Jia, H, Wallace, R. M, Gnade, B. E

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Degradation of pentacene deposited on gold, aluminum and parylene surfaces: Impact of pentacene thickness von Martinez-Landeros, V.H., Gutierrez-Heredia, G., Aguirre-Tostado, F.S., Sotelo-Lerma, M., Gnade, B.E., Quevedo-Lopez, M.A.

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A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes von Gutiérrez-Heredia, G, González, L A, Alshareef, H N, Gnade, B E, Quevedo-López, M

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Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics von Pant, G., Gnade, A., Kim, M. J., Wallace, R. M., Gnade, B. E., Quevedo-Lopez, M. A., Kirsch, P. D.

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Adjustable structural, optical and dielectric characteristics in sol–gel PMMA–SiO2 hybrid films von Morales-Acosta, M.D., Alvarado-Beltrán, C.G., Quevedo-López, M.A., Gnade, B.E., Mendoza-Galván, A., Ramírez-Bon, R.

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Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics von Mao, D., Quevedo-Lopez, M.A., Stiegler, H., Gnade, B.E., Alshareef, H.N.

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Simulation based performance comparison of transistors designed using standard photolithographic and coarse printing design specifications von Wondmagegn, W.T., Satyala, N.T., Stiegler, H.J., Quevedo-Lopez, M.A., Forsythe, E.W., Pieper, R.J., Gnade, B.E.

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Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics von Mao, D., Mejia, I., Stiegler, H., Gnade, B. E., Quevedo-Lopez, M. A.

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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices von Govindarajan, S., Böscke, T. S., Sivasubramani, P., Kirsch, P. D., Lee, B. H., Tseng, H.-H., Jammy, R., Schröder, U., Ramanathan, S., Gnade, B. E.

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P-type thin films transistors with solution-deposited lead sulfide films as semiconductor von Carrillo-Castillo, A., Salas-Villasenor, A., Mejia, I., Aguirre-Tostado, S., Gnade, B.E., Quevedo-López, M.A.

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Enhancement of the thermoelectric efficiency of PbTe by selective site doping: Effect of group VA impurities von Xiong, K., Longo, R.C., Wang, W., Gupta, R.P., Gnade, B.E., Cho, K.

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Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films von Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., LiFatou, A., Chambers, J. J., Colombo, L.

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Stabilization of Au quantum point contacts by self-assembled monolayers von Zheng, T., Jia, H., Wallace, R.M., Gnade, B.E.

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Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics von Mao, D., Mejia, I., Salas-Villasenor, A.L., Singh, M., Stiegler, H., Gnade, B.E., Quevedo-Lopez, M.A.

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Interdiffusion studies for HfSixOy and ZrSixOy on Si von Quevedo-Lopez, M. A., El-Bouanani, M., Gnade, B. E., Wallace, R. M., Visokay, M. R., Douglas, M., Bevan, M. J., Colombo, L.

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