Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy von Seidl, J, Gluschke, J. G, Yuan, X, Naureen, S, Shahid, N, Tan, H. H, Jagadish, C, Micolich, A. P, Caroff, P

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Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors von Gluschke, J. G, Seidl, J, Lyttleton, R. W, Carrad, D. J, Cochrane, J. W, Lehmann, S, Samuelson, L, Micolich, A. P

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p‑GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating von Ullah, A. R, Meyer, F, Gluschke, J. G, Naureen, S, Caroff, P, Krogstrup, P, Nygård, J, Micolich, A. P

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InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments von Burke, A. M, Carrad, D. J, Gluschke, J. G, Storm, K, Fahlvik Svensson, S, Linke, H, Samuelson, L, Micolich, A. P

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Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion von Gluschke, J. G, Seidl, J, Lyttleton, R. W, Nguyen, K, Lagier, M, Meyer, F, Krogstrup, P, Nygård, J, Lehmann, S, Mostert, A. B, Meredith, P, Micolich, A. P

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Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies von Gluschke, J G, Fahlvik Svensson, S, Thelander, C, Linke, H

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A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications von Gluschke, J. G., Richter, F., Micolich, A. P.

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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors von Gluschke, J G, Seidl, J, Burke, A M, Lyttleton, R W, Carrad, D J, Ullah, A R, Fahlvik, S, Lehmann, S, Linke, H, Micolich, A P

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Towards low-dimensional hole systems in Be-doped GaAs nanowires von Ullah, A R, Gluschke, J G, Krogstrup, P, Sørensen, C B, Nygård, J, Micolich, A P

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Post-growth shaping and transport anisotropy in 2D InAs nanofins von Seidl, J, Gluschke, J G, Yuan, X, Tan, H H, Jagadish, C, Caroff, P, Micolich, A P

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Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion von Gluschke, J G, Seidl, J, Lyttleton, R W, Nguyen, K, Lagier, M, Meyer, F, Krogstrup, P, Nygard, J, Lehmann, S, Mostert, A B, Meredith, P, Micolich, A P

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A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications von Gluschke, J G, Richter, F, Micolich, A P

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Impact of invasive metal probes on Hall measurements in semiconductor nanostructures von Gluschke, J G, Seidl, J, Tan, H H, Jagadish, C, Caroff, P, Micolich, A P

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p-GaAs nanowire MESFETs with near-thermal limit gating von Ullah, A R, Meyer, F, Gluschke, J G, Naureen, S, Caroff, P, Krogstrup, P, Nygard, J, Micolich, A P

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Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy von Seidl, J, Gluschke, J G, Yuan, X, Naureen, S, Shahid, N, Tan, H H, Jagadish, C, Micolich, A P, Caroff, P

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Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors von Gluschke, J G, Seidl, J, Lyttleton, R W, Carrad, D J, Cochrane, J W, Lehmann, S, Samuelson, L, Micolich, A P

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Towards low-dimensional hole systems in Be-doped GaAs nanowires von Ullah, A R, Gluschke, J G, Krogstrup, P, Sørensen, C B, Nygård, J, Micolich, A P

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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors von Gluschke, J G, Seidl, J, Burke, A M, Lyttleton, R W, Carrad, D J, Ullah, A R, Svensson, S Fahlvik, Lehmann, S, Linke, H, Micolich, A P

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InAs nanowire transistors with multiple, independent wrap-gate segments von Burke, A M, Carrad, D J, Gluschke, J G, Storm, K, Svensson, S Fahlvik, Linke, H, Samuelson, L, Micolich, A P

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A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications von Gluschke, JG, Richter, F, Micolich, AP

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