Real-time laser-light scattering studies of surface topography development during GaAs MBE growth von Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., Spowart, J.

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Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE) von Pickering, C, Leong, W.Y, Glasper, J.L, Boher, P, Piel, J.-P

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Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements von McGovern, P., Benedikt, J., Tasker, P.J., Powell, J., Hilton, K.P., Glasper, J.L., Balmer, R.S., Martin, T., Uren, M.J.

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Comparison of theoretical and measured efficiencies for Tb3+ -activated garnet oxide phosphors von Robbins, D.J., Cockayne, B., Lent, B., Glasper, J.L.

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A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems von LEONG, W. Y, CHURCHILL, A. C, ROBBINS, D. J, GLASPER, J. L, WILLIAMS, G. M

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The mechanism of cross-relaxation in Y3Al5O12: Tb3 von Robbins, D.J., Cockayne, B., Lent, B., Glasper, J.L.

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In situ optical monitoring for SiGe epitaxy von Robbins, D.J, Pickering, C, Russell, J, Carline, R.T, Dann, A.W, Marrs, A.D, Glasper, J.L

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A study of base contact formation in epitaxial [formula omitted] HBT structures von Nejim, A., Cristiano, F., Hemment, P.L.F., Hope, D.A.O., Glasper, J.L., Pickering, C., Leong, W.Y., Robbins, D.J.

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The measurement of surface boron on silicon wafers annealed in vacuum and gas ambients von Robbins, D.J., Pidduck, A.J., Glasper, J.L., Young, I.M., Pickering, C.

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Comparison of theoretical and measured efficiencies for Tb 3+ -activated garnet oxide phosphors von Robbins, D.J., Cockayne, B., Lent, B., Glasper, J.L.

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The mechanism of [formula omitted] cross-relaxation in Y 3Al 5O 12: Tb 3 von Robbins, D.J., Cockayne, B., Lent, B., Glasper, J.L.

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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors von Mouis, M., Gregory, H.J., Denorme, S., Mathiot, D., Ashburn, P., Robbins, D.J., Glasper, J.L.

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