Ion-beam induced relaxation of strained Ge xSi 1− x layers von Kringhøj, P., Glasko, J.M., Elliman, R.G.

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Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions von Petravić, M., Svensson, B.G., Williams, J.S., Glasko, J.M.

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Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures von Glasko, J.M, Elliman, R.G, Zou, J, Cockayne, D.J.H, Gerald, J.D.Fitz

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Ion-beam induced relaxation of strained GexSi1−x layers von Kringhøj, P., Glasko, J.M., Elliman, R.G.

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Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon von Beaman, K.L., Koveshnikov, Sergei V., Rozgonyi, George A., Glasko, J.M.

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The effect of irradiation temperature on post-irradiation strain levels in Ge/sub x/Si/sub 1-x//Si strained layer heterostructures von Glasko, J.M., Zou, J., Cockayne, D.J.H., FitzGerald, J., Elliman, R.G.

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