Optical and magnetic resonance studies of Be-doped GaN bulk crystals von Glaser, E.R., Freitas, J.A., Storm, D.F., Teisseyre, Henryk, Boćkowski, Michal

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The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs von Brown, C. R, Estes, N. J, Whiteside, V. R, Wang, B, Hossain, K, Golding, T. D, Leroux, M, Al Khalfioui, M, Tischler, J. G, Ellis, C. T, Glaser, E. R, Sellers, I. R

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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy von Freitas, J.A., Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., Shim, K.B.

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Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates von Zvanut, M. E., Paudel, Subash, Glaser, E. R., Iwinska, M., Sochacki, T., Bockowski, M.

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Anisotropies in the linear polarization of vacancy photoluminescence in diamond induced by crystal rotations and strong magnetic fields von Braukmann, D., Popov, V. P., Glaser, E. R., Kennedy, T. A., Bayer, M., Debus, J.

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Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC von Embley, J S, Colton, J S, Miller, K G, Morris, M A, Meehan, M, Crossen, S L, Weaver, B D, Glaser, E R, Carter, S G

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Detection of nanowatt microwave radiation by the photoluminescence of an ensemble of negatively charged nitrogen vacancies in diamond von Debus, J., Ivanov, V. Yu, Braukmann, D., Azamat, D. V., Glaser, E. R., Kennedy, T. A., Yakovlev, D. R., Bayer, M.

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Stochastic inversion of electrical resistivity changes using a Markov Chain Monte Carlo approach von Ramirez, A. L., Nitao, J. J., Hanley, W. G., Aines, R., Glaser, R. E., Sengupta, S. K., Dyer, K. M., Hickling, T. L., Daily, W. D.

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Enhanced radiation tolerance in Mn-doped ferroelectric thin films von Brewer, S. J., Williams, S. C., Griffin, L. A., Cress, C. D., Rivas, M., Rudy, R. Q., Polcawich, R. G., Glaser, E. R., Bassiri-Gharb, N.

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Incorporation of Mg in Free-Standing HVPE GaN Substrates von Zvanut, M. E., Dashdorj, J., Freitas, J. A., Glaser, E. R., Willoughby, W. R., Leach, J. H., Udwary, K.

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High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition von Lu, Peng, Edgar, J.H., Glembocki, O.J., Klein, P.B., Glaser, E.R., Perrin, J., Chaudhuri, J.

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Efficient iron doping of HVPE GaN von Freitas, J.A., Culbertson, J.C., Glaser, E.R., Richter, E., Weyers, M., Oliveira, A.C., Garg, V.K.

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Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC von Carlos, W.E, Glaser, E.R, Shanabrook, B.V

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Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures von Glaser, E. R., Bennett, B. R., Shanabrook, B. V., Magno, R.

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Circularly polarized zero-phonon transitions of vacancies in diamond at high magnetic fields von Braukmann, D., Glaser, E. R., Kennedy, T. A., Bayer, M., Debus, J.

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Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition von Glaser, E. R., Carlos, W. E., Braga, G. C. B., Freitas, J. A., Moore, W. J., Shanabrook, B. V., Henry, R. L., Wickenden, A. E., Koleske, D. D., Obloh, H., Kozodoy, P., DenBaars, S. P., Mishra, U. K.

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs von Katzer, D.S., Storm, D.F., Binari, S.C., Roussos, J.A., Shanabrook, B.V., Glaser, E.R.

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Incorporation of pervasive impurities on HVPE GaN growth directions von Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Glaser, E.R., Sochacki, T., Bockowski, M., Lee, S.K., Shim, K.B.

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Deep level transient capacitance measurements of GaSb self-assembled quantum dots von Magno, R., Bennett, Brian R., Glaser, E. R.

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Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate von Mukherjee, A., Ellis, C. T., Arik, M. M., Taheri, P., Oliverio, E., Fowler, P., Tischler, J. G., Liu, Y., Glaser, E. R., Myers-Ward, R. L., Tedesco, J. L., Eddy, C. R., Gaskill, D. Kurt, Zeng, H., Wang, G., Cerne, J.

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