Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament von Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.

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Metal oxide resistive memory switching mechanism based on conductive filament properties von Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafría, M.

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NRAM: a disruptive carbon-nanotube resistance-change memory von Gilmer, D C, Rueckes, T, Cleveland, L

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Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer von Goel, N., Gilmer, D.C., Park, H., Diaz, V., Sun, Y., Price, J., Park, C., Pianetta, P., Kirsch, P.D., Jammy, R.

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Microscopy study of the conductive filament in HfO2 resistive switching memory devices von Privitera, S., Bersuker, G., Butcher, B., Kalantarian, A., Lombardo, S., Bongiorno, C., Geer, R., Gilmer, D.C., Kirsch, P.D.

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Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides von Schaeffer, J.K., Gilmer, D.C., Capasso, C., Kalpat, S., Taylor, B., Raymond, M.V., Triyoso, D., Hegde, R., Samavedam, S.B., White, B.E.

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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films von Kukli, K., Ritala, M., Pore, V., Leskelä, M., Sajavaara, T., Hegde, R. I., Gilmer, D. C., Tobin, P. J., Jones, A. C., Aspinall, H. C.

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Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates von Kim, Hyeon-Seag, Gilmer, D. C., Campbell, S. A., Polla, D. L.

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Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications von Park, S. D., Park, C., Gilmer, D. C., Park, H. K., Kang, C. Y., Lim, K. Y., Burham, C., Barnett, J., Kirsch, P. D., Tseng, H. H., Jammy, R., Yeom, G. Y.

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Fermi-level pinning at the polysilicon/metal-oxide interface-Part II von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory von Nardi, F., Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.

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Compatibility of silicon gates with hafnium-based gate dielectrics von Gilmer, D.C., Hegde, R., Cotton, R., Smith, J., Dip, L., Garcia, R., Dhandapani, V., Triyoso, D., Roan, D., Franke, A., Rai, R., Prabhu, L., Hobbs, C., Grant, J.M., La, L., Samavedam, S., Taylor, B., Tseng, H., Tobin, P.

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Conductive filament structure in HfO2 resistive switching memory devices von Privitera, S., Bersuker, G., Lombardo, S., Bongiorno, C., Gilmer, D.C.

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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties von Bersuker, G, Gilmer, D C, Veksler, D, Yum, J, Park, H, Lian, S, Vandelli, L, Padovani, A, Larcher, L, McKenna, K, Shluger, A, Iglesias, V, Porti, M, Nafria, M, Taylor, W, Kirsch, P D, Jammy, R

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Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics von Kim, Hyeon-Seag, Campbell, S. A., Gilmer, D. C., Kaushik, V., Conner, J., Prabhu, L., Anderson, A.

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Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM von Deora, S., Bersuker, G., Sung, M. G., Gilmer, D. C., Kirsch, P. D., Li, H.-F, Chong, H., Gausepohl, S.

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Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics von Gilmer, D. C., Hegde, R., Cotton, R., Garcia, R., Dhandapani, V., Triyoso, D., Roan, D., Franke, A., Rai, R., Prabhu, L., Hobbs, C., Grant, J. M., La, L., Samavedam, S., Taylor, B., Tseng, H., Tobin, P.

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe von Huang, J., Kirsch, P.D., Jungwoo Oh, Se Hoon Lee, Majhi, P., Harris, H.R., Gilmer, D.C., Bersuker, G., Dawei Heh, Chang Seo Park, Park, C., Hsing-Huang Tseng, Jammy, R.

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Fermi-level pinning at the polysilicon/metal oxide interface-Part I von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

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Charge trapping and degradation in high-permittivity TiO2 dielectric films von Hyeon-Seag Kim, Campbell, S.A., Gilmer, C.

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