ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance von Green, Andrew J., Gillespie, James K., Fitch, Robert C., Walker, Dennis E., Lindquist, Miles, Crespo, Antonio, Brooks, Dan, Beam, Edward, Xie, Andy, Kumar, Vipan, Jimenez, Jose, Lee, Cathy, Cao, Yu, Chabak, Kelson D., Jessen, Gregg H.

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band von Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices von Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G., Crespo, A., Langley, D., Denninghoff, D.J., Trejo, M., Heller, E.R.

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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates von Chabak, K.D., Gillespie, J.K., Miller, V., Crespo, A., Roussos, J., Trejo, M., Walker, D.E., Via, G.D., Jessen, G.H., Wasserbauer, J., Faili, F., Babic, D.I., Francis, D., Ejeckam, F.

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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors von Liu, Lu, Lo, Chien-Fong, Xi, Yuyin, Wang, Yuxi, Ren, Fan, Pearton, Stephen J., Kim, Hong-Yeol, Kim, Jihyun, Fitch, Robert C., Walker, Dennis E., Chabak, Kelson D., Gillespie, James K., Tetlak, Stephen E., Via, Glen D., Crespo, Antonio, Kravchenko, Ivan I.

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Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures von Reynolds, C. Lewis, Reynolds, Judith G., Crespo, Antonio, Gillespie, James K., Chabak, Kelson D., Davis, Robert F.

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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator von Chabak, K. D., Walker, Dennis E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D. J., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C., Trejo, M.

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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency von Chabak, Kelson D, Trejo, Manuel, Crespo, Antonio, Walker, Dennis E, Jinwei Yang, Gaska, Remis, Kossler, Mauricio, Gillespie, James K, Jessen, Gregg H, Trimble, Virginia, Via, Glen D

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AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications von Guo, Shiping, Gao, Xiang, Gorka, Daniel, Chung, Jinwoork W., Wang, Han, Palacios, Tomas, Crespo, Antonio, Gillespie, James K., Chabak, Kelson, Trejo, Manuel, Miller, Virginia, Bellot, Mark, Via, Glen, Kossler, Mauricio, Smith, Howard, Tomich, David

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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer von Seok Joo Doo, Roblin, P., Jessen, G.H., Fitch, R.C., Gillespie, J.K., Moser, N.A., Crespo, A., Simpson, G., Jon King

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Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management von Trejo, Manuel, Jessen, Gregg H., Chabak, Kelson D., Gillespie, James K., Crespo, Antonio, Kossler, Mauricio, Trimble, Virginia, Langley, Derrick, Heller, Eric R., Claflin, Bruce, Walker, Dennis E., Poling, Brian, Gilbert, Ryan, Via, Glen D., Hoelscher, John, Roussos, Jason, Ejeckam, Felix, Zimmer, Jerry

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Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process von Fitch, Robert C., Walker, Dennis E., Green, Andrew J., Tetlak, Stephen E., Gillespie, James K., Gilbert, Ryan D., Sutherlin, Karynn A., Gouty, William D., Theimer, James P., Via, Glen D., Chabak, Kelson D., Jessen, Gregg H.

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Wet chemical digital etching of GaAs at room temperature von DESALVO, G. C, BOZADA, C. A, NAKANO, K, PETTIFORD, C. I, QUACH, T. K, SEWELL, J. S, VIA, G. D, EBEL, J. L, LOOK, D. C, BARRETTE, J. P, CERNY, C. L. A, DETTMER, R. W, GILLESPIE, J. K, HAVASY, C. K, JENKINS, T. J

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Implementation of High-Power-Density [Formula Omitted]-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process von Fitch, Robert C, Walker, Dennis E, Green, Andrew J, Tetlak, Stephen E, Gillespie, James K, Gilbert, Ryan D, Sutherlin, Karynn A, Gouty, William D, Theimer, James P, Via, Glen D, Chabak, Kelson D, Jessen, Gregg H

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Full-Wafer Characterization of AIGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates von CHABAK, Kelson D, GILLESPIE, James K, FAILI, Firooz, BABIC, Dubravko I, FRANCIS, Daniel, EJECKAM, Felix, MILLER, Virginia, CRESPO, Antonio, ROUSSOS, Jason, TREJO, Manuel, WALKER, Dennis E, VIA, Glen D, JESSEN, Gregg H, WASSERBAUER, John

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Controlled gate surface processing of AlGaN∕GaN high electron mobility transistors von Walker, Dennis E., Fitch, Robert C., Gillespie, James K., Jessen, Gregg H., Cassity, Paul D., Breedlove, Joseph R., Brillson, Leonard J.

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Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management : Compound semiconductors von TREJO, Manuel, JESSEN, Gregg H, WALKER, Dennis E, POLING, Brian, GILBERT, Ryan, VIA, Glen D, HOELSCHER, John, ROUSSOS, Jason, EJECKAM, Felix, ZIMMER, Jerry, CHABAK, Kelson D, GILLESPIE, James K, CRESPO, Antonio, KOSSLER, Mauricio, TRIMBLE, Virginia, LANGLEY, Derrick, HELLER, Eric R, CLAFLIN, Bruce

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Hybrid Integration of Microwave Circuit Solenoid Inductors and AlGaN/GaN HEMTs Using an SU-8 Photosensitive Epoxy Interposer Layer von Fitch, Robert C., Kazimierczuk, Marian, Gillespie, James, Mattamana, Aji, Orlando, Pompei, Groves, Kari, Quach, Tony

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Controlled gate surface processing of Al Ga N ∕ Ga N high electronmobility transistors von Walker, Dennis E., Fitch, Robert C., Gillespie, James K., Jessen, Gregg H., Cassity, Paul D., Breedlove, Joseph R., Brillson, Leonard J.

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AFRL/GaAsTek heterojunction bipolar transistor (HBT) process development von Gillespie, James K

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