Characterization of the green band in photoluminescence spectra of heavily doped AlxGa1−xN:Si with the Al content x > 0.5 von Osinnykh, Igor V., Malin, Timur V., Plyusnin, Viktor F., Suranov, Andrei S., Gilinsky, Alexander M., Zhuravlev, Konstantin S.

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Characterization of the green band in photoluminescence spectra of heavily doped Al x Ga 1− x N:Si with the Al content x > 0.5 von Osinnykh, Igor V., Malin, Timur V., Plyusnin, Viktor F., Suranov, Andrei S., Gilinsky, Alexander M., Zhuravlev, Konstantin S.

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Wide dynamic range photodiodes for microwave photonics and comunication systems von Gilinsky, Alexander M., Aksenov, Maxim S., Chistokhin, Igor B., Dmitriev, Dmitriy V., Toropov, Alexander Ivanovich, Zhuravlev, Konstantin Sergeevich

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Minority carrier diffusion length in AlxGa1-xN (x = 0.1) grown by ammonia molecular beam epitaxy von Malin, Timur, Gilinsky, Alexander, Mansurov, Vladimir, Protasov, Dmitriy, Yakimov, Eugeny, Zhuravlev, Konstantin

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