Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate von van Geelen, A., Hageman, P.R., Bauhuis, G.J., van Rijsingen, P.C., Schmidt, P., Giling, L.J.

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A closer study on the self-annihilation of antiphase boundaries in GaAs epilayers von Li, Yuan, Giling, L.J.

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On the formation of antiphase domains in the system of GaAs on Ge von Li, Yuan, Salviati, G., Bongers, M.M.G., Lazzarini, L., Nasi, L., Giling, L.J.

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CVD diamond growth mechanisms as identified by surface topography von van Enckevort, W.J.P., Janssen, G., Vollenberg, W., Schermer, J.J., Giling, L.J., Seal, M.

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Step-related growth phenomena on exact and misoriented {001} surfaces of CVD-grown single-crystal diamonds von van Enckevort, W.J.P., Janssen, G., Schermer, J.J., Giling, L.J.

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Anisotropy in monocrystalline CVD diamond growth. III: Surface morphology of hot filament grown films deposited on planar substrates von VAN ENCKEVORT, W. J. P, JANSSEN, G, VOLLENBERG, W, GILING, L. J

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Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers von Schermer, J.J., de Theije, F.K., Giling, L.J.

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Gas phase depletion and flow dynamics in horizontal MOCVD reactors von Van de Ven, J., Rutten, G.M.J., Raaijmakers, M.J., Giling, L.J.

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Growth of phosphorus and nitrogen co-doped diamond films von Cao, G.Z., Giling, L.J., Alkemade, P.F.A.

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On the influence of surface reconstruction on crystal growth processes von Giling, L.J., Van Enckevort, W.J.P.

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Anisotropy in monocrystalline CVD diamond growth I. A sphere growth experiment von van Enckevort, W.J.P., Janssen, G., Giling, L.J.

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Si-doping of MOCVD GaAs: Closer analysis of the incorporation process von Tang, X., Lochs, H.G.M., Hageman, P.R., de Croon, M.H.J.M., Giling, L.J., Bons, A.J.

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The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE von Tang, X., Nijenhuis, J. te, Li, Y., Giling, L.J.

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“Mosaic” growth of diamond von Janssen, G., Giling, L.J.

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Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAs von te Nijenhuis, J., van der Wel, P.J., van Asten, R.W.F., Hageman, P.R., Giling, L.J.

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Antiphase disorder in GaAs/Ge heterostructures for solar cells von Lazzarini, L., Nasi, L., Salviati, G., Fregonara, C.Z., Li, Y., Giling, L.J., Hardingham, C., Holt, D.B.

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Interface-induced conversion of infrared to visible light at semiconductor interfaces von Driessen, FA, Cheong, HM, Mascarenhas, A, Deb, SK, Hageman, PR, Bauhuis, GJ, Giling, LJ

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Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental results von Gardeniers, J.G.E., Maas, W.E.J.R., Van Meerten, R.Z.C., Giling, L.J.

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Characterization of single-crystal diamond grown by chemical vapour deposition processes von Janssen, G., van Enckevort, W.J.P., Vollenberg, W., Giling, L.J.

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Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy von te Nijenhuis, J., Hageman, P.R., Giling, L.J.

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