Process Technology Variation von Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., Mudanai, S.

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From Process Corners to Statistical Circuit Design Methodology: Opportunities and Challenges von Dongaonkar, Sourabh, Mudanai, Sivakumar P., Giles, Martin D.

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Transient phosphorus diffusion below the amorphization threshold von GILES, M. D

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Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers von Wang, E.X., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., Stettler, M., Giles, M.D.

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Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements von Sangiorgi, Enrico, Asenov, Asen, Bennett, Herbert S., Dutton, Robert W., Esseni, David, Giles, Martin D., Hane, Masami, Nishi, Kenji, Ranaweera, Jeewika, Selberherr, Siegfried

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Compressive Uniaxial Stress Bandstructure Engineering for Transferred-Hole Devices von Kotlyar, Roza, Giles, Martin D, Mudanai, Sivakumar P, Kuhn, Kelin J, Cea, Stephen M, Linton, Thomas D, Pillarisetty, Ravi

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TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade von Giles, Martin D.

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A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement von Obradovic, Borna, Matagne, Philippe, Shifren, Lucian, Wang, Everett, Stettler, Mark, He, Jun, Giles, Martin D.

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Transient phosphorus diffusion from silicon and argon implantation damage von GILES, M. D

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Process Technology Variation : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS von KUHN, Kelin J, GILES, Martin D, BECHER, David, KOLAR, Pramod, KORNFELD, Avner, KOTLYAR, Roza, MA, Sean T, MAHESHWARI, Atul, MUDANAI, Sivakumar

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Classical and Quantum Radiation Reaction for Linear Acceleration von Higuchi, Atsushi, Martin, Giles D. R.

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FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES von GILES, Martin D, GHANI, Tahir

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The Role of Interfaces in Damascene Phase-Change Memory von Kencke, D.L., Karpov, I.V., Johnson, B.G., Sean Jong Lee, DerChang Kau, Hudgens, S.J., Reifenberg, J.P., Savransky, S.D., Jingyan Zhang, Giles, M.D., Spadini, G.

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Fins for metal oxide semiconductor device structures von Ghani, Tahir, Giles, Martin D

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Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices von Sangiorgi, Enrico, Asenov, Asen, Bennett, Herbert S., Dutton, Robert W., Esseni, David, Giles, Martin D., Hane, Masami, Jungemann, Christoph, Nishi, Kenji, Selberherr, Siegfried, Takagi, Shinichi

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Quantum radiation reaction and the Green’s function decomposition von Higuchi, Atsushi, Martin, Giles D. R.

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Radiation reaction on charged particles in three-dimensional motion in classical and quantum electrodynamics von Higuchi, Atsushi, Martin, Giles D. R.

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Nanowire structures having non-discrete source and drain regions von Cea, Stephen M, Cappellani, Annalisa, Rios, Rafael, Giles, Martin D, Kim, Seiyon, Kuhn, Kelin J

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Lorentz-Dirac force from QED for linear acceleration von Higuchi, Atsushi, Martin, Giles D. R.

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TCAD Challenges in the Nanotechnology Era von Giles, M.D.

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