Interface-induced room-temperature ferromagnetism in hydrogenated epitaxial graphene von Giesbers, A J M, Uhlířová, K, Konečný, M, Peters, E C, Burghard, M, Aarts, J, Flipse, C F J

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Charge transport gap in graphene antidot lattices von Giesbers, A. J. M., Peters, E. C., Burghard, M., Kern, K.

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From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching von Neubeck, Soeren, Ponomarenko, Leonid A., Freitag, Frank, Giesbers, A. J. M., Zeitler, Ulrich, Morozov, Sergey V., Blake, Peter, Geim, Andre K., Novoselov, Kostya S.

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Correlation-induced single-flux-quantum penetration in quantum rings von Zeitler, U, Giesbers, A. J. M, Katsnelson, M. I, Reuter, D, Wieck, A. D, Biasiol, G, Sorba, L, Maan, J. C

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Nanolithography and manipulation of graphene using an atomic force microscope von Giesbers, A.J.M., Zeitler, U., Neubeck, S., Freitag, F., Novoselov, K.S., Maan, J.C.

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Surface phonon scattering in epitaxial graphene on 6H-SiC von Giesbers, A J M, Prochazka, P, Flipse, C F J

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Quantum-Hall activation gaps in graphene von Giesbers, A J M, Zeitler, U, Katsnelson, M I, Ponomarenko, L A, Mohiuddin, T M, Maan, J C

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High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC von Iezhokin, I., Offermans, P., Brongersma, S. H., Giesbers, A. J. M., Flipse, C. F. J.

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Scaling of the quantum Hall plateau-plateau transition in graphene von Giesbers, A. J. M., Zeitler, U., Ponomarenko, L. A., Yang, R., Novoselov, K. S., Geim, A. K., Maan, J. C.

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Quantum resistance metrology in graphene von Giesbers, A. J. M., Rietveld, G., Houtzager, E., Zeitler, U., Yang, R., Novoselov, K. S., Geim, A. K., Maan, J. C.

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Growth of multi-layered graphene on molybdenum catalyst by solid phase reaction with amorphous carbon von Ricciardella, Filiberto, Vollebregt, Sten, Kurganova, Evgenia, Giesbers, A J M, Ahmadi, Majid, Sarro, Pasqualina Maria

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Variable range hopping in graphene antidot lattices von Peters, E. C., Giesbers, A. J. M., Burghard, M.

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Valley-polarized massive charge carriers in gapped graphene von Peters, E. C., Giesbers, A. J. M., Zeitler, U., Burghard, M., Kern, K.

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Quantized coexisting electrons and holes in graphene measured using temperature-dependent magnetotransport von Kurganova, E. V., Wiedmann, S., Giesbers, A. J. M., Gorbachev, R. V., Novoselov, K. S., Katsnelson, M. I., Tudorovskiy, T., Maan, J. C., Zeitler, U.

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Feasibility of inline cooling in long distance HTS power line von Zajaczkowski, B., Giesbers, A.J.M., Holtrust, M., Haenen, E., den Heijer, R.

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Quantum Hall activation gaps in bilayer graphene von Kurganova, E.V., Giesbers, A.J.M., Gorbachev, R.V., Geim, A.K., Novoselov, K.S., Maan, J.C., Zeitler, U.

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Magneto-transport in the zero-energy Landau level of single-layer and bilayer graphene von Zeitler, U, Giesbers, A J M, Elferen, H J van, Kurganova, E V, McCollam, A, Maan, J C

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High-Field Electronic Properties of Graphene von Zeitler, U., Giesbers, A. J. M., McCollam, A., Kurganova, E. V., van Elferen, H. J., Maan, J. C.

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Temperature dependence of the quantum Hall effect in graphene von Giesbers, A.J.M., Zeitler, U., Katsnelson, M.I., Ponomarenko, L.A., Mohiuddin, T.M.G., Maan, J.C.

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Defects, a challenge for graphene in flexible electronics von Giesbers, A.J.M., Bouten, P.C.P., Cillessen, J.F.M., van der Tempel, L., Klootwijk, J.H., Pesquera, A., Centeno, A., Zurutuza, A., Balkenende, A.R.

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