Dimensional Analysis von Gibbings, J.C

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Rotating disc studies of streaming current von Gibbings, J.C.

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Diffusion of the intermittency across the boundary layer in transition von Gibbings, J C

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Equilibrium critical thickness for Si1-xGex strained layers on (100) Si von HOUGHTON, D. C, GIBBINGS, C. J, TUPPEN, C. G, LYONS, M. H, HALLIWELL, M. A. G

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The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values von TUPPEN, C. G, GIBBINGS, C. J, HOCKLY, M

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Fish, birds and flies von Gibbings, J C

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A testbed for the twenty-first century von Henning, I., Sim, S., Gibbings, C., Russell, M., Cochrane, P.

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Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon von GIBBINGS, C. J, TUPPEN, C. G, HOCKLY, M

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Effects of sandpaper roughness and stream turbulence on the turbulent boundary layer von Gibbings, J. C., Al-Shukri, S. M.

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The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors von Shafi, Z.A., Gibbings, C.J., Ashburn, P., Post, I.R.C., Tuppen, C.G., Godfrey, D.J.

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Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices von Halliwell, M A G, Lyons, M H, Davey, S T, Hockly, M, Tuppen, C G, Gibbings, C J

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Observation of the track of a misfit dislocation in ordered Ga0.5In0.5P von Baxter, C. S., Stobbs, W. M., Gibbings, C. J.

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An Elementary Introduction von Gibbings, J. C

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A study of 0.98 mu m lasers with Ga0.50In0.50P confining layers von Murrell, D L, Seltzer, C P, Gibbings, C J, Elton, D J

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The kinetics of dislocation glide in SiGe alloy layers von TUPPEN, C. G, GIBBINGS, C. J

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Characterisation of Si/Si1-xGex superlattices by anodic dissolution von Gibbings, C J, Tuppen, C G, Casey, S M

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Misfit dislocations in annealed Si1−xGex/Si heterostructures von Tuppen, C.G., Gibbings, C.J.

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Strain relaxation in Si1-xGex layers on Si(001) von CAPANO, M. A, HART, L, BOWEN, D. K, GORDON-SMITH, D, THOMAS, C. R, GIBBINGS, C. J, HALLIWELL, M. A. G, HOBBS, L. W

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Asymmetric strain distributions resulting from deliberately induced misfit dislocations von Tuppen, C. G., Gibbings, C. J., Hockly, M., Halliwell, M. A. G.

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Selective polycrystalline and epitaxial growth by silicon molecular beam epitaxy von Gibbings, C.J., Davis, J.R., Hockly, M., Tuppen, C.G.

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