New Achievements on CVD Based Methods for SiC Epitaxial Growth von La Via, Francesco, Crippa, Danilo, Veneroni, Alessandro, Zamolo, L., Giannazzo, G., Ruggiero, Alfonso, Mauceri, Marco, Leone, Stefano, Abbondanza, Giuseppe, Di Franco, Salvatore, Abbagnale, G., Roccaforte, Fabrizio, Neri, L., Reitano, Ricardo, Omarini, Fabrizio, Foti, Gaetano, Masi, Maurizio, Pistone, Giuseppe, Valente, Gian Luca, Calcagno, Lucia

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Transthoracic three-dimensional echocardiographic reconstruction of left and right ventricles: In vitro validation and comparison with magnetic resonance imaging von Pini, Riccardo, Giannazzo, Giuseppe, Di Bari, Mauro, Innocenti, Francesca, Rega, Luigi, Casolo, Giancarlo, Devereux, Richard B.

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Transthoracic three-dimensional echocardiographic reconstruction of left and right ventricles : In vitro validation and comparisons with magnetic resonance imaging von PINI, R, GIANNAZZO, G, DI BARI, M, INNOCENTI, F, REGA, L, CASOLO, G, DEVEREUX, R. B

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Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum von Deretzis, I., Alberti, A., Pellegrino, G., Smecca, E., Giannazzo, F., Sakai, N., Miyasaka, T., La Magna, A.

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Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures von Greco, G., Fiorenza, P., Spera, M., Giannazzo, F., Roccaforte, F.

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Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs von Greco, G., Fiorenza, P., Giannazzo, F., Vivona, M., Venuto, C., Iucolano, F., Roccaforte, F.

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Recent advances on dielectrics technology for SiC and GaN power devices von Roccaforte, F., Fiorenza, P., Greco, G., Vivona, M., Lo Nigro, R., Giannazzo, F., Patti, A., Saggio, M.

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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing von Fiorenza, P., Maiolo, L., Fortunato, G., Zielinski, M., La Via, F., Giannazzo, F., Roccaforte, F.

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From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure von Fisichella, G., Greco, G., Roccaforte, F., Giannazzo, F.

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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC von Vivona, M, Greco, G, Spera, M, Fiorenza, P, Giannazzo, F, La Magna, A, Roccaforte, F

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Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere von Armano, A., Buscarino, G., Cannas, M., Gelardi, F.M., Giannazzo, F., Schilirò, E., Agnello, S.

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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy von Giannazzo, F, Shtepliuk, I, Ivanov, I G, Iakimov, T, Kakanakova-Georgieva, A, Schilirò, E, Fiorenza, P, Yakimova, R

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Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere von Piazza, A, Giannazzo, F, Buscarino, G, Fisichella, G, Magna, A. La, Roccaforte, F, Cannas, M, Gelardi, F.M, Agnello, S

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Performance Analysis of CFRP Composite Strips Confined RC Columns under Axial Compression von Ganesh Prabhu, G., Bang, Jin Wook, Lee, Byung Jae, Murugadoss, J. Raja, Kim, Yun Yong

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Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC von Vivona, M, Greco, G, Giannazzo, F, Lo Nigro, R, Rascunà, S, Saggio, M, Roccaforte, F

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Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors von Giannazzo, F., Fisichella, G., Piazza, A., Di Franco, S., Greco, G., Agnello, S., Roccaforte, F.

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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition von Giannazzo, F, Dagher, R, Schilirò, E, Panasci, S E, Greco, G, Nicotra, G, Roccaforte, F, Agnello, S, Brault, J, Cordier, Y, Michon, A

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Graphene integration with nitride semiconductors for high power and high frequency electronics von Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y.

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Microscopic mechanisms of graphene electrolytic delamination from metal substrates von Fisichella, G., Di Franco, S., Roccaforte, F., Ravesi, S., Giannazzo, F.

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Nanostructuring in Ge by self-ion implantation von Romano, L., Impellizzeri, G., Tomasello, M. V., Giannazzo, F., Spinella, C., Grimaldi, M. G.

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