TCAD Simulation of Single Event Effects on Electronic Devices von Buhler, R. T., Novo, C., Perin, A. L., Galeti, M., Pereira, C. F., Guazzelli, M. A., Giacomini, R. C.

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Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures von Novo, C, Giacomini, R, Doria, R, Afzalian, A, Flandre, D

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Ionizing radiation effects in a rectifier circuit von Bôas, A C V, Guazzelli, M A, Giacomini, R C, Medina, N H

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Innovative approach for electrical characterisation of pseudo-resistors von Benko, P.L, Galeti, M, Pereira, C.F, Lucchi, J.C, Giacomini, R

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Evaluation and Combination of Conditional Quantile Forecasts von Giacomini, Raffaella, Komunjer, Ivana

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A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector von Silveira, M A G, Melo, M A A, Aguiar, V A P, Rallo, A, Santos, R B B, Medina, N H, Added, N, Seixas, L E, Leite, F G, Cunha, F G, Cirne, K H, Giacomini, R, de Oliveira, J A

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A New Analytic Model for Double Gate FinFETs Parasitic Resistance von Pereira, A.S. N., Giacomini, R.

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Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape von Bühler, R T, Giacomini, R, Pavanello, M A, Martino, J A

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Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate Layouts von Giacomini, R., Martino, J. A.

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How useful are no-arbitrage restrictions for forecasting the term structure of interest rates? von Carriero, Andrea, Giacomini, Raffaella

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COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaN-based transistor 10 KeV X-ray Analysis von Bôas, A.C.V., Alberton, S.G., de Melo, M.A.A., Santos, R.B.B., Giacomini, R.C., Medina, N.H., Seixas, L.E., Finco, S., Palomo, F.R., Guazzelli, M. A.

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Ionizing radiation hardness tests of GaN HEMTs for harsh environments von Vilas Bôas, Alexis C., de Melo, M.A.A., Santos, R.B.B., Giacomini, R., Medina, N.H., Seixas, L.E., Finco, S., Palomo, F.R., Romero-Maestre, A., Guazzelli, Marcilei A.

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Bond Returns and Market Expectations von Altavilla, C., Giacomini, R., Costantini, R.

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Fin shape influence on the analog performance of standard and strained MuGFETs von Bühler, R T, Martino, J A, Agopian, P G D, Giacomini, R, Simoen, E, Claeys, C

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An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models von Pereira, A.S.N., de Streel, G., Planes, N., Haond, M., Giacomini, R., Flandre, D., Kilchytska, V.

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An accurate closed-expression model for FinFETs parasitic resistance von Pereira, A.S.N., Giacomini, R.

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Aggregation of space-time processes von Giacomini, Raffaella, Granger, Clive W.J.

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Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation von Novo, C., Giacomini, R., Afzalian, A., Flandre, D.

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Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs von Perin, A. L., Giacomini, R.

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Mixtures of t-distributions for finance and forecasting von Giacomini, Raffaella, Gottschling, Andreas, Haefke, Christian, White, Halbert

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