Enhanced write performance of a 64-mb phase-change random access memory von OH, Hyung-Rok, CHO, Beak-Hyung, JEONG, Gi-Tae, JEONG, Hong-Sik, KIM, Kinam, WOO YEONG CHO, KANG, Sangbeom, CHOI, Byung-Gil, KIM, Hye-Jin, KIM, Ki-Sung, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun

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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput von LEE, Kwang-Jin, CHO, Beak-Hyung, PARK, Mu-Hui, RO, Yu-Hwan, CHOI, Joon-Yong, KIM, Ki-Sung, KIM, Young-Ran, SHIN, In-Cheol, LIM, Ki-Won, CHO, Ho-Keun, CHOI, Chang-Han, CHUNG, Won-Ryul, CHO, Woo-Yeong, KIM, Du-Eung, YOON, Yong-Jin, YU, Kwang-Suk, JEONG, Gi-Tae, JEONG, Hong-Sik, KWAK, Choong-Keun, KIM, Chang-Hyun, KIM, Kinam, KANG, Sangbeom, CHOI, Byung-Gil, OH, Hyung-Rok, LEE, Chang-Soo, KIM, Hye-Jin, PARK, Joon-Min, QI WANG

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Highly Reliable Ring-Type Contact for High-Density Phase Change Memory von Jeong, Chang-Wook, Ahn, Su-Jin, Hwang, Young-Nam, Song, Yoon-Jong, Oh, Jae-Hee, Lee, Su-Youn, Lee, Se-Ho, Ryoo, Kyung-Chang, Park, Jong-Hyun, Park, Jae-Hyun, Shin, Jae-Min, Yeung, Fai, Jeong, Won-Cheol, Kim, Jeong-In, Koh, Gwan-Hyeob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam

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Current-voltage characteristics of vertical diodes for next generation memories von Hokyun An, Kong-Soo Lee, Yoongoo Kang, Seonghoon Jeong, Wonseok Yoo, Jae-Jong Han, Bonghyun Kim, Hanjin Lim, Seokwoo Nam, Gi-Tae Jeong, Ho-Kyu Kang, Chilhee Chung, Byoungdeog Choi

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Ring Contact Electrode Process for High Density Phase Change Random Access Memory von Ryoo, Kyung-Chang, Song, Yoon Jong, Shin, Jae-Min, Park, Sang-Su, Lim, Dong-Won, Kim, Jae-Hyun, Park, Woon-Ik, Sim, Ku-Ri, Jeong, Ji-Hyun, Kang, Dae-Hwan, Kong, Jun-Hyuck, Jeong, Chang-Wook, Oh, Jae-Hee, Park, Jae-Hyun, Kim, Jeong-In, Oh, Yong-Tae, Kim, Ji-Sun, Eun, Seong-Ho, Lee, Kwang-Woo, Koh, Seong-Pil, Fai, Yung, Koh, Gwan-Hyob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam

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A high performance 16 Mb DRAM using giga-bit technologies von Jeong, Gi-Tae, Lee, Kyu-Chan, Ha, Dae-Won, Lee, Kyu-Hyun, Kim, Kyung-Hoon, Kim, Il-Gu, Kim, Do-Hyung, Kim, Kinam

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DRAM reliability von Kim, Kinam, Jeong, Gi-Tae, Chun, Chan-Woong, Hwang, Sam-Jin

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An experimental high performance 16M DRAM using giga-bit technologies von Jeong, Gi-Tae, Cho, Sang-Hyun, Kim, Min-Jung, Shin, Yoo-Chul, Kim, Do-Hyung, Jang, Seung-Kyu, Hwang, Bung-Han, Choi, Dong-Uk, Ha, Dae-Won, Kim, Kinam

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Mehrpegel-Phasenänderungsspeicher und verwandte Verfahren von Jeong, Gi-Tae

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A new DRAM cell technology using merged process with storage node and memory cell contact for 4 Gb DRAM and beyond von Yoon-Soo Chun, Byung-Jun Park, Gi-Tae Jeong, Yoo-Sang Hwang, Kyu-Hyun Lee, Hong-Sik Jeong, Tae-Young Jung, Kinam Kim

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Ge 2 Sb 2 Te 5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory von Yeung, Fai, Ahn, Su-Jin, Hwang, Young-Nam, Jeong, Chang-Wook, Song, Yoon-Jong, Lee, Su-Youn, Lee, Se-Ho, Ryoo, Kyung-Chang, Park, Jae-Hyun, Shin, Jae-Min, Jeong, Won-Cheol, Kim, Young-Tae, Koh, Gwan-Hyeob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam

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Multi-level phase change memory device and related methods von Jeong, Gi-Tae

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A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput von Lee, Kwang-Jin, Cho, Beak-Hyung, Cho, Woo-Yeong, Kang, Sangbeom, Choi, Byung-Gil, Oh, Hyung-Rok, Lee, Chang-Soo, Kim, Hye-Jin, Park, Joon-Min, Wang, Qi, Park, Mu-Hui, Ro, Yu-Hwan, Choi, Joon-Yong, Kim, Ki-Sung, Kim, Young-Ran, Shin, In-Cheol, Lim, Ki-Won, Cho, Ho-Keun, Choi, Chang-Han, Chung, Won-Ryul, Kim, Du-Eung, Yu, Kwang-Suk, Jeong, Gi-Tae, Jeong, Hong-Sik, Kwak, Choong-Keun, Kim, Chang-Hyun, Kim, Kinam

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Enhanced write performance of a 64 Mb phase-change random access memory von Hyung-rok On, Beak-hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-gil Choi, Hye-jin Kim, Ki-sung Kim, Du-eung Kim, Choong-keun Kwak, Hyun-geun Byun, Gi-tae Jeong, Hong-silk Jeong, Kinam Kim

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Memory devices, sense amplifiers, and methods of operation thereof using voltage-dependent capacitor pre-amplification von Jeong, Gi-tae

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Data sensing circuits and methods for magnetic memory devices von Jeong, Gi-Tae

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Phase change memory device having Schottky diode and method of fabricating the same von Ha, Dae-Won, Jeong, Gi-Tae

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Data sensing circuits and methods for magnetic memory devices von Jeong, Gi-Tae

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Memory devices, sense amplifiers, and methods of operation thereof using voltage-dependent capacitor pre-amplification von Jeong, Gi-Tae

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Multi-bit phase change memory devices von Hwang, Young-nam, Park, Soon-oh, Jeong, Hong-sik, Jeong, Gi-tae

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