Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics von Lukin, Daniil M., Guidry, Melissa A., Yang, Joshua, Ghezellou, Misagh, Deb Mishra, Sattwik, Abe, Hiroshi, Ohshima, Takeshi, Ul-Hassan, Jawad, Vučković, Jelena

Volltext

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide von Nagy, Roland, Dasari, Durga Bhaktavatsala Rao, Babin, Charles, Liu, Di, Vorobyov, Vadim, Niethammer, Matthias, Widmann, Matthias, Linkewitz, Tobias, Gediz, Izel, Stöhr, Rainer, Weber, Heiko B., Ohshima, Takeshi, Ghezellou, Misagh, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

Volltext

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD von Gogova, Daniela, Ghezellou, Misagh, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Hassan, Jawad ul, Persson, Axel R., Persson, Per O. Å., Kordina, Olof, Monemar, Bo, Hilfiker, Matthew, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

Volltext

Broadband single-mode planar waveguides in monolithic 4H-SiC von Bosma, Tom, Hendriks, Joop, Ghezellou, Misagh, Son, Nguyen T., Ul-Hassan, Jawad, van der Wal, Caspar H.

Volltext

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide von Cilibrizzi, Pasquale, Arshad, Muhammad Junaid, Tissot, Benedikt, Son, Nguyen Tien, Ivanov, Ivan G., Astner, Thomas, Koller, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, White, Daniel, Bekker, Christiaan, Burkard, Guido, Trupke, Michael, Bonato, Cristian

Volltext

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers von Ghezellou, Misagh, Kumar, Piyush, Bathen, Marianne E., Karsthof, Robert, Sveinbjörnsson, Einar Ö., Grossner, Ulrike, Bergman, J. Peder, Vines, Lasse, Ul-Hassan, Jawad

Volltext

Spectral stability of V2 centres in sub-micron 4H-SiC membranes von Heiler, Jonah, Körber, Jonathan, Hesselmeier, Erik, Kuna, Pierre, Stöhr, Rainer, Fuchs, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, Knolle, Wolfgang, Becher, Christoph, Kaiser, Florian, Wrachtrup, Jörg

Volltext

Author Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes von Heiler, Jonah, Körber, Jonathan, Hesselmeier, Erik, Kuna, Pierre, Stöhr, Rainer, Fuchs, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, Knolle, Wolfgang, Becher, Christoph, Kaiser, Florian, Wrachtrup, Jörg

Volltext

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide von Bathen, Marianne Etzelmueller, Linnarsson, Margareta, Ghezellou, Misagh, Ul Hassan, Jawad, Vines, Lasse

Volltext

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers von Karhu, Robin, Ghezellou, Misagh, Ul Hassan, Jawad

Volltext

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers von Ghezellou, Misagh, Ul‐Hassan, Jawad

Volltext

High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide von Hesselmeier, Erik, Kuna, Pierre, Knolle, Wolfgang, Kaiser, Florian, Son, Nguyen Tien, Ghezellou, Misagh, Ul-Hassan, Jawad, Vorobyov, Vadim, Wrachtrup, Jörg

Volltext

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers von Karhu, Robin, Ghezellou, Misagh, Ul Hassan, Jawad

Volltext

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide von Hesselmeier, Erik, Kuna, Pierre, Takács, István, Ivády, Viktor, Knolle, Wolfgang, Son, Nguyen Tien, Ghezellou, Misagh, Ul-Hassan, Jawad, Dasari, Durga, Kaiser, Florian, Vorobyov, Vadim, Wrachtrup, Jörg

Volltext

Dual configuration of shallow acceptor levels in 4H-SiC von Bathen, Marianne Etzelmüller, Kumar, Piyush, Ghezellou, Misagh, Belanche, Manuel, Vines, Lasse, Ul-Hassan, Jawad, Grossner, Ulrike

Volltext

Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes (vol 9, 34, 2024) von Heiler, Jonah, Korber, Jonathan, Hesselmeier, Erik, Kuna, Pierre, Stohr, Rainer, Fuchs, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, Knolle, Wolfgang, Becher, Christoph, Kaiser, Florian, Wrachtrup, Jorg

Volltext

Novel nanostructures of bromoaluminum phthalocyanine grown by physical vapor phase transport von Pourteimoor, Salar, Haratizadeh, Hamid, Azim Araghi, Mohammad Esmail, Ghezellou, Misagh

Volltext

Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD von Gogova, Daniela, Ghezellou, Misagh, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, ul-Hassan, Jawad, Persson, Axel R., Persson, Per, Kordina, Olof, Monemar, Bo, Hilfiker, Matthew, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

Volltext

Characterization of single shallow silicon-vacancy centers in 4H-SiC von Singh, Harpreet, Hollberg, Mario Alex, Ghezellou, Misagh, Ul-Hassan, Jawad, Kaiser, Florian, Suter, Dieter

Volltext

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature von Steidl, Timo, Kuna, Pierre, Hesselmeier-Hüttmann, Erik, Liu, Di, Stöhr, Rainer, Knolle, Wolfgang, Ghezellou, Misagh, Ul-Hassan, Jawad, Schober, Maximilian, Bockstedte, Michel, Gali, Adam, Vorobyov, Vadim, Wrachtrup, Jörg

Volltext bestellen