On Solving "Problems" von Ghez, Richard

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Reactive diffusion in a prototype system: nickel-aluminum I: Non-constant diffusion coefficient von d'Heurle, F.M., Ghez, R.

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Thermal oxidation of silicon: New experimental results and models von Irene, Eugene A., Ghez, R.

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The stability of growing or evaporating crystals von GHEZ, R, COHEN, H. G, KELLER, J. B

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Reactive diffusion in a prototype system : nickel-aluminum. II : The ordered Cu3Au rule and the sequence of phase formation, nucleation von D'HEURLE, F. M, GHEZ, R

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Crystal growth as a problem in chemisorption von Ghez, R., Madar, R.

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Expansions in time for the solution of one-dimensional stefan problems of crystal growth von Ghez, R.

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Charge trapping studies in SiO2 using high current injection from Si-rich SiO2 films von DiMaria, D. J., Ghez, R., Dong, D. W.

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Galactic center research： manifestations of the central black hole von Morris, Mark R., Meyer, Leo, Ghez, Andrea M.

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Silicon Oxidation Studies--Role of H2O von Irene, E A, Ghez, R

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Growth and dissolution kinetics of III-V heterostructures formed by LPE von Small, M. B., Ghez, R.

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Correlation of the interface reaction constant with elementary surface processes von Ghez, R.

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A mathematical model for silicide oxidation von ZHANG, S.-L, GHEZ, R, D'HEURLE, F. M

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Coverage effects on the BCF surface diffusion model von Ghez, R.

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Irreversible thermodynamics of a stationary interface von Ghez, R.

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Stability of crystals that grow or evaporate by step propagation von GHEZ, R, COHEN, H. G, KELLER, J. B

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A generalized Gibbsian surface von Ghez, R.

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Reversal in the growth or dissolution of III-V heterostructures by liquid phase epitaxy von SMALL, M. B, GHEZ, R

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An analysis of combined surface and volume diffusion processes in crystal growth von Gilmer, G.H., Ghez, R., Cabrera, N.

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Laser heating and melting of thin films on low-conductivity substrates von Ghez, R. A., Laff, R. A.

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