Application of Ti: W barrier metallization for integrated circuits von Ghate, P.B., Blair, J.C., Fuller, C.R., McGuire, G.E.

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Interaction between the formal and informal financial sectors: The Asian experience von Ghate, P.B

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Metallization for very-large-scale integrated circuits von Ghate, P.B.

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Aluminum alloy metallization for integrated circuits von Ghate, P.B.

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Metallization in microelectronics von Ghate, P.B., Blair, J.C., Fuller, C.R.

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Improved metallization for surface acoustic wave devices von Latham, J.I., Shreve, W.R., Tolar, N.J., Ghate, P.B.

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Electromigration testing of Ti: W/Al and Ti: W/Al-Cu film conductors von Ghate, P.B., Blair, J.C.

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Magnetron-sputtered aluminum films for integrated circuit interconnections von Fuller, C.R., Ghate, P.B.

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Effects of vacuum ambience on aluminum films von Blair, J.C., Ghate, P.B.

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Anisotropic Diffusion of Cadmium and Gold Tracers in Zinc Single Crystals von Ghate, P. B.

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New Technique for Calculating Correlations for Vacancy Diffusion von Huntington, H. B., Ghate, P. B.

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Concerning electromigration in thin films von Blair, J.C., Ghate, P.B., Haywood, C.T.

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