Impact of superlinear defect-related recombination on LED performance at low injection von Gfroerer, T. H., Chen, Ruiming, Watt, Grace, Liu, Zhiqiang, Zhang, Yong

Volltext

Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering von Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, M. W., Zhang, Yong

Volltext

Spatial resolution versus data acquisition efficiency in mapping an inhomogeneous system with species diffusion von Chen, Fengxiang, Zhang, Yong, Gfroerer, T. H., Finger, A. N., Wanlass, M. W.

Volltext

External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure von GAUCK, H, GFROERER, T. H, RENN, M. J, CORNELL, E. A, BERTNESS, K. A

Volltext

An extended defect as a sensor for free carrier diffusion in a semiconductor von Gfroerer, T. H., Zhang, Yong, Wanlass, M. W.

Volltext

Excitation-dependent recombination and diffusion near an isolated dislocation in GaAs von Gfroerer, T. H., Crowley, C. M., Read, C. M., Wanlass, M. W.

Volltext

Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates von Gfroerer, T. H., Priestley, L. P., Fairley, M. F., Wanlass, M. W.

Volltext

Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates von Gfroerer, T. H., Gillespie, C. E., Campbell, J. P., Wanlass, M. W.

Volltext

Defect states with an occupation-dependent lattice configuration in zinc-doped Ga0.58In0.42P on GaAs von Gfroerer, T H, Hampton, D G, Wanlass, M W

Volltext

Defect-related density of states in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates von Gfroerer, T. H., Priestley, L. P., Weindruch, F. E., Wanlass, M. W.

Volltext

Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector von Gfroerer, T. H., Cornell, E. A., Wanlass, M. W.

Volltext

Slow relaxation of excited states in strain-induced quantum dots von Gfroerer, TH, Sturge, MD, Kash, K, Yater, JA, Plaut, AS, Lin, PS, Florez, LT, Harbison, JP, Das, SR, Lebrun, L

Volltext

AX-type defects in zinc-doped GaAs ( 1 − x ) P ( x ) on GaAs von Gfroerer, T. H., Hampton, D. G., Simov, P. R., Wanlass, M. W.

Volltext

Correlative Characterization of Defect Clusters in GaAs Solar Cells by High-Resolution TEM and Spatially Resolved Optical Techniques von McKeon, B.S., Chen, Q., Zhang, S., Hu, C.-K., Gfroerer, T.H., Wanlass, M.W., Zhang, Y., Smith, David J.

Volltext

Observation of an anomalous minority carrier trap in n-type InGaAs von Gfroerer, T.H., Simov, K.R., Wanlass, M.W.

Volltext

Using the excitation-dependent radiative efficiency to assess asymmetry in the defect-related density of states von Topaz, A., West, B. A., Gfroerer, T. H., Wanlass, M. W.

Volltext

A comparison of photoluminescence imaging and confocal photoluminescence microscopy in the study of diffusion near isolated extended defects in GaAs von Gfroerer, T. H., Yong Zhang, Wanlass, M. W.

Volltext

Band-to-band and sub-band gap cathodoluminescence from GaAsP/GaInP epistructures grown on GaAs substrates von Gfroerer, T.H., Romero, M.J., Al-Jassim, M.M., Wanlass, M.W.

Volltext

Recombination in Low-Bandgap InGaAs von Gfroerer, T.H., Wanlass, M.W.

Volltext

Band-to-band and sub-band gap cathodoluminescence from GaAsP/GaInP epistructures grown on GaAs substrates von GFROERER, T. H, ROMERO, M. J, AL-JASSIM, M. M, WANLASS, M. W

Volltext