Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors von McDermott, B. T., Gertner, E. R., Pittman, S., Seabury, C. W., Chang, M. F.

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P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs von Bubulac, L O, Edwall, D D, McConnell, D, DeWames, R E, Blazejewski, E R, Gertner, E R

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MOCVD Hg1-xCdxTe/GaAs for IR detectors von Edwall, D D, Chen, J S, Bajaj, J, Gertner, E R

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As diffusion in Hg1-xCdxTe for junction formation von Bubulac, L O, Irvine, S J C, Gertner, E R, Bajaj, J, Lin, W P, Zucca, R

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P-type doping of double layer mercury cadmium telluride for junction formation von BUBULAC, L. O, EDWALL, D. D, IRVINE, S. J. C, GERTNER, E. R, SHIN, S. H

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Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates von ARIAS, J. M, DEWAMES, R. E, SHIN, S. H, PASKO, J. G, CHEN, J. S, GERTNER, E. R

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Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy von Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

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MOVPE growth of HgCdTe von Irvine, S J C, Gertner, E R, Bubulac, L O, Gil, R V, Edwall, D D

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HgCdTe on sapphire — A new approach to infrared detector arrays von Gertner, E.R., Tennant, W.E., Blackwell, J.D., Rode, J.P.

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Variable temperature Hall effect on p-Hg1-XCdXTe grown on CdTe and sapphire substrates by liquid phase epitaxy von EDWALL, D. D, GERTNER, E. R, TENNANT, W. E

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Long and middle wavelength infrared photodiodes fabricated with Hg1-xCdxTe grown by molecular-beam epitaxy von ARIAS, J. M, SHIN, S. H, PASKO, J. G, DEWAMES, R. E, GERTNER, E. R

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Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces von Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

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Epitaxial Mercury Cadmium Telluride von Gertner, E R

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Ion Implantation Study of HgCdTe von Bubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D.

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Infrared photodiodes fabricated with Hg1-xCdxTe grown by molecular beam epitaxy von ARIAS, J. M, SHIN, S. H, PASKO, J. G, GERTNER, E. R

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Lattice parameter measurements in epitaxic layers von Lind, M. D., Gertner, E. R., Rode, J. P., Andrews, A. M.

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Backside-illuminated InAsSb/GaSb broadband detectors von Bubulac, L. O., Andrews, A. M., Gertner, E. R., Cheung, D. T.

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Liquid phase epitaxial growth of large area Hg1-xCdxTe epitaxial layers von EDWALL, D. D, GERTNER, E. R, TENNANT, W. E

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MBE p-type Hg1-xCdxTe grown on the (110) orientation von Arias, J.M., Shin, S.H., Gertner, E.R.

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Magnetization of the Superconducting Sheath von Joseph, A. S., Thorsen, A. C., Gertner, E. R., Savage, J. W.

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