Raman diagnostics of photoinduced heating of silicon nanowires prepared by metal-assisted chemical etching von Rodichkina, S. P., Osminkina, L. A., Isaiev, M., Pavlikov, A. V., Zoteev, A. V., Georgobiani, V. A., Gonchar, K. A., Vasiliev, A. N., Timoshenko, V. Yu

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Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays von Zabotnov, S V, Kholodov, M M, Georgobiani, V A, Presnov, D E, Golovan, L A, Kashkarov, P K

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Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level von Georgobiani, V. A., Gonchar, K. A., Osminkina, L. A., Timoshenko, V. Yu

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Nanoparticles prepared from porous silicon nanowires for bio-imaging and sonodynamic therapy von Osminkina, Liubov A, Sivakov, Vladimir A, Mysov, Grigory A, Georgobiani, Veronika A, Natashina, Ulyana А, Talkenberg, Florian, Solovyev, Valery V, Kudryavtsev, Andrew A, Timoshenko, Victor Yu

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Enhanced photon lifetime in silicon nanowire arrays and increased efficiency of optical processes in them von Efimova, A., Eliseev, A., Georgobiani, V., Kholodov, M., Kolchin, A., Presnov, D., Tkachenko, N., Zabotnov, S., Golovan, L., Kashkarov, P.

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Structural and photoluminescent properties of nanowiress formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level von Georgobiani, V.A, Gonchar, K.A, Osminkina, L.A, Timoshenko, V. Yu

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p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals von Georgobiani, A.N., Gruzintsev, A.N., Volkov, V.T., Vorobiev, M.O., Demin, V.I., Dravin, V.A.

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Properties of epitaxial ZnO:P films von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.

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Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Lepnev, L. S.

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Radical-recombination luminescence, ion-luminescence and photoluminescence of CaGa2S4:Eu von Georgobiani, A.N., Styrov, V.V., Tyutyunnikov, V.I., Tagiev, B.G., Tagiev, O.B., Djabbarov, R.B.

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Synthesis and IR-excited luminescence of (Y1 − xTmx)2O2S solid solutions von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Zvereva, E. M., Lobanov, A. N.

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Luminescence and Optical-Memory model of SrAl2O4:Eu2+,Dy3+ and Sr4Al14O25:Eu2+,Dy3 von Georgobiani, A. N., Gutan, V. B., Demin, V. I., Semendyaev, S. V.

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Exciton photoluminescence of hexagonal ZnO von Butkhuzi, T. V., Chelidze, T. G., Georgobiani, A. N., Jashiashvili, D. L., Khulordava, T. G., Tsekvava, B. E.

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Effect of Pr3+ on the stokes luminescence of YPO4:Nd3+ under IR excitation von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Zvereva, E. M., Lobanov, A. N.

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Multifunctional anti-stokes Y2O2S-based white phosphors von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Zvereva, E. M., Lobanov, A. N.

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Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.

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Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions von Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Datskevich, N. P.

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A new “invisible” IR phosphor based on yttrium and ytterbium phosphates von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Semendyaev, S. V.

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Luminescence in various classes of Er3+-doped inorganic compounds under IR excitation von Manashirov, O. Ya, Georgobiani, A. N., Gutan, V. B., Semendyaev, S. V.

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Y2O2S:Er3+,Ce3+—A new “invisible” IR phosphor von Georgobiani, A. N., Gutan, V. B., Kazaryan, M. A., Krotov, A. V., Manashirov, O. Ya, Timofeev, Yu. P.

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