AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets von Li, Hanchao, Xie, Hanlin, Xie, Qingyun, Liu, Siyu, Wang, Yue, Wang, Yuxuan, Ranjan, Kumud, Zhuang, Yihao, Gong, Xiao, Ing Ng, Geok

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Electrothermal Large-Signal Model of III-V FETs Including Frequency Dispersion and Charge Conservation von Liu, Lin-Sheng, Ma, Jian-Guo, Ng, Geok-Ing

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Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency von Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P, Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi

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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition von Ye, Gang, Wang, Hong, Geok Ng, Serene Lay, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Band alignment between GaN and ZrO2 formed by atomic layer deposition von Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition von Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability von Lu, Zhongzhiguang, Li, Hanchao, Xie, Hanlin, Zhuang, Yihao, Wensong, Wang, Ing, Ng Geok, Zheng, Yuanjin

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Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity von Xing, Weichuan, Liu, Zhihong, Ranjan, Kumud, Ng, Geok Ing, Palacios, Tomas

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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications von Meneghini, Matteo, Ng, Geok Ing, Medjdoub, Farid, Buffolo, Matteo, Warnock, Shireen, Nath, Digbijoy, Suda, Jun, Shi, Junxia, Shen, Shyh-Chiang

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Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved } and } Linearity von Weichuan Xing, Zhihong Liu, Haodong Qiu, Geok Ing Ng, Palacios, Tomas

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First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding von Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ing Ng, Geok

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Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors von John, Rohit Abraham, Chien, Nguyen Anh, Shukla, Sudhanshu, Tiwari, Naveen, Shi, Chen, Ing, Ng Geok, Mathews, Nripan

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GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs von Xie, Hanlin, Liu, Zhihong, Hu, Wenrui, Zhong, Zheng, Lee, Kenneth, Guo, Yong-Xin, Ng, Geok Ing

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Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser von Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond von Ranjan, Kumud, Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ng, Geok Ing

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Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy von Dharmarasu, Nethaji, Radhakrishnan, K, Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E, Ing, Ng Geok

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Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system von Zhang, Zecen, Ng, Geok Ing, Hu, Ting, Qiu, Haodong, Guo, Xin, Wang, Wanjun, Rouifed, Mohamed Saïd, Liu, Chongyang, Wang, Hong

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High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser von Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Sia, Jia Xu Brian, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate von Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon

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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression von Junbin Zhang, Syamal, Binit, Xing Zhou, Arulkumaran, Subramaniam, Geok Ing Ng

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