Two-dimensional photonic crystal coupled-defect laser diode von Happ, Thomas D., Kamp, Martin, Forchel, Alfred, Gentner, Jean-Louis, Goldstein, L.

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Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects von Krebs, O., Rondi, D., Gentner, J. L., Goldstein, L., Voisin, P.

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Longitudinal mode selection in constricted photonic crystal guides and electrically injected lasers von de Rossi, S., Sagnes, I., Legratiet, L., Talneau, A., Berrier, A., Mulot, M., Anand, S., Gentner, J.L.

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Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy von Dumont, H., Rutzinger, D., Vincent, C., Dazord, J., Monteil, Y., Alexandre, F., Gentner, J. L.

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High external efficiency in a monomode full-photonic-crystal laser under continuous wave electrical injection von Talneau, A., LeGratiet, L., Gentner, J. L., Berrier, A., Mulot, M., Anand, S., Olivier, S.

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Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device von Körbl, M., Gröning, A., Schweizer, H., Gentner, J. L.

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Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP–InP von Müller, M., Kamp, M., Forchel, A., Gentner, J.-L.

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Wavelength stabilized single-mode lasers by coupled micro-square resonators von Bach, L., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

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Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers von Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.

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GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator von Lelarge, F., Dagens, B., Cuisin, C., Le Gouezigou, O., Patriarche, G., Van Parys, W., Vanwolleghem, M., Baets, R., Gentner, J.L.

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Monolithically integrated tunable laterally coupled distributed-feedback lasers von Schreiner, R., Nagele, P., Korbl, M., Groning, A., Gentner, J.L., Schweizer, H.

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Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography von Bach, L., Rennon, S., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

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Multiwafer gas source MBE development for InGaAsP/InP laser production von Lelarge, F., Sanchez, J.J, Gaborit, F., Gentner, J.L.

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InP-based short cavity lasers with 2D photonic crystal mirror von Happ, T D, Markard, A, Kamp, M, Gentner, J-L, chel, A

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1.1-W continuous-wave 1480-nm semiconductor lasers with distributed electrodes for mode shaping von Salet, P., Gerard, F., Fillion, T., Pinquier, A., Gentner, J.-L., Delepine, S., Doussiere, P.

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Multiwavelength laterally complex coupled distributed feedback laser arrays with monolithically integrated combiner fabricated by focused-ion-beam lithography von Bach, L., Reithmaier, I. P., Forchel, A., Gentner, J. L., Goldstein, L.

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GSMBE growth of GaInAsP/InP 1.3 mu m-TM-lasers for monolithic integration with optical waveguide isolator von LELARGE, F, DAGENS, B, CUISIN, C, LE GOUEZIGOU, O, PATRIARCHE, G, Van Parys, Wouter, Vanwolleghem, Mathias, Baets, Roel, GENTNER, JL

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High temperature 10 Gbit/s directly modulated 1.3 mu m DFB lasers using InAsP/InGaAsP materials von Gauthier-Lafaye, O, Colson, V, Py, J, Thedrez, B, Gentner, J-L

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High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography von Rennon, S., Bach, L., Reithmaier, J. P., Forchel, A., Gentner, J. L., Goldstein, L.

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Electronic wavelength tuning of multisegment InGaAsP/InP lasers with laterally coupled absorptive DFB gratings von Körbl, M., Gröning, A., Schweizer, H., Gentner, J.L.

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