Determinations of structure and bonding in amorphous SiO2 using 17O NMR von Geissberger, A.E., Bray, P.J.

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Raman-scattering studies of silicon-implanted gallium arsenide: the role of amorphicity von HOLTZ, M, ZALLEN, R, GEISSBERGER, A. E, SADLER, R. A

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Determinations of structure and bonding in amorphous SiO 2 using 17O NMR von Geissberger, A.E., Bray, P.J.

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A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs von Geissberger, A.E., Bahl, I.J., Griffin, E.L., Sadler, R.A.

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Class-B power MMIC amplifiers with 70 percent power-added efficiency von Bahl, I.J., Griffin, E.L., Geissberger, A.E., Andricos, C., Brukiewa, T.F.

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Glass structure von Bray, P.J, Geissberger, A.E, Bucholtz, F, Harris, I.A

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A high yield buried p-layer fabrication process for GaAs LSI circuits von Sadler, R.A., Studtmann, G.D., Geissberger, A.E., Singh, H.P.

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Raman-scattering studies of implantation-amorphized gallium arsenide: Comparison to sputtered and evaporated a-GaAs films von Zallen, R., Holtz, M., Geissberger, A.E., Sadler, R.A., Paul, W., Thèye, M.-L.

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Microwave characterization of a resistive-gate MESFET oscillator von Cooper, J.A., Yin, Y., Balzan, M.L., Geissberger, A.E.

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A 5.1-GHz 1.9-mW GaAs binary frequency divider von Sadler, R.A., Geissberger, A.E., Singh, H.P.

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GaAs IC's fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications von Bahl, I.J., Willems, D.A., Naber, J.F., Singh, H.P., Griffin, E.L., Pollman, M.D., Geissberger, A.E., Sadler, R.A.

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Microwave characterization of the contiguous domain oscillator von Cooper, J.A., Yin, Y., Balzan, M.L., Geissberger, A.E.

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Operation of a resistive-gate MESFET oscillator in the single-domain transit-time mode von Yin, Y., Fu, H., Cooper, J.A., Balzan, M.L., Geissberger, A.E.

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C-band 10 W MMIC class-A amplifier manufactured using the refractory SAG process von Bahl, I.J., Wang, R., Geissberger, A.E., Griffin, E.L., Andricos, C.

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On the thermal history of Libyan Desert glass von Galeener, F.L., Geissberger, A.E., Weeks, R.A.

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Fabrication, RE performance, and yield of a combined limiting amplifier and dual-modulus prescalar GaAs IC chip von Geissberger, A.E., Sadler, R.A., Singh, H.P., Lewis, F.K., Bahl, I.J., Balzan, M.L., Griffin, E.L., Drinkwine, M.J.

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