Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V‑Pit Formation on the AlGaN/GaN Interface von Hospodková, Alice, Hájek, František, Hubáček, Tomáš, Gedeonová, Zuzana, Hubík, Pavel, Hývl, Matěj, Pangrác, Jiří, Dominec, Filip, Košutová, Tereza

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Highly phosphorus-doped polycrystalline diamond growth and properties von Lambert, Nicolas, Weiss, Zdeněk, Klimša, Ladislav, Kopeček, Jaromír, Gedeonová, Zuzana, Hubík, Pavel, Mortet, Vincent

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Boron-doped {113}, {115} and {118}-oriented single-crystal diamond electrodes: Effect of surface pre-treatment von Čambal, Peter, Baluchová, Simona, Taylor, Andrew, Míka, Luděk, Vondráček, Martin, Gedeonová, Zuzana, Hubík, Pavel, Mortet, Vincent, Schwarzová-Pecková, Karolina

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Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping von Vaněk, Tomáš, Jarý, Vítězslav, Hubáček, Tomáš, Hájek, František, Kuldová, Karla, Gedeonová, Zuzana, Babin, Vladimír, Remeš, Zdeněk, Buryi, Maksym

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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design von Hajek, Frantisek, Hospodkova, Alice, Hubik, Pavel, Gedeonova, Zuzana, Hubacek, Tomas, Pangrac, Jiri, Kuldova, Karla

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Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters von Hospodková, Alice, Hájek, František, Hubáček, Tomáš, Gedeonová, Zuzana, Hubík, Pavel, Mareš, Jiří J., Pangrác, Jiří, Dominec, Filip, Kuldová, Karla, Hulicius, Eduard

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Issues of bullying and cyberbullying in primary and secondary schools in Slovakia von Zuzana GEDEONOVÁ

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Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power von Alam, Mahebub, Hubik, Pavel, Gedeonova, Zuzana, Fekete, Ladislav, Kopecek, Jaromir, Taylor, Andrew, Mortet, Vincent

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Improving financial literacy of a selected group in favour of eliminating crime von Drotárová, Jozefína, Misiuk, Andzej, Gedeonová, Zuzana

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