Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition von Burat, O., Bouchier, D., Stambouli, V., Gautherin, G.

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Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition von LEGAGNEUX, P, GARRY, G, DIEUMEGARD, D, SCHWEBEL, C, PELLET, C, GAUTHERIN, G, SIEJKA, J

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Thermal oxidation in wet oxygen of reactive ion-beam sputter-deposited silicon nitride films von FOURRIER, A, BOSSEBOEUF, A, BOUCHIER, D, GAUTHERIN, G

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WNx films prepared by reactive ion-beam sputter deposition von BOSSEBOEUF, A, FOURRIER, A, MEYER, F, BENHOCINE, A, GAUTHERIN, G

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Cleaning of Si and GaAs crystal surfaces by ion bombardment in the 50-1500 eV range: influence of bombarding energy and sample temperature on damage and incorporation von RABINZOHN, P, GAUTHERIN, G, AGIUS, B, COHEN, C

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Epitaxial growth of single-crystal Si1-xGex on Si(100) by ion beam sputter deposition von MEYER, F, SCHWEBEL, C, PELLET, C, GAUTHERIN, G, BUXBAUM, A, EIZENBERG, M, RAIZMAN, A

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Ion energy effects on the intrinsic stress in BxNy layers deposited by ion-beam-assisted evaporation von STAMBOULI, V, BURAT, O, BOUCHIER, D, GAUTHERIN, G

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Angular distributions of heavy particles emitted from a Si target during an ion beam sputter process von Schwebel, C., Pellet, C., Gautherin, G.

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Some trends in preparing film structures by ion beam methods von Gautherin, G., Weissmantel, Chr

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Small, simple and high efficiency arsenic ion source von Lejeune, C, Gautherin, G

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Low temperature deposition of silicon nitride by reactive ion-beam sputtering von BOUCHIER, D, GAUTHERIN, G, SCHWEBEL, C, BOSSEBŒUF, A, AGIUS, B, RIGO, S

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Low-pressure oxidation of silicon stimulated by low-energy electron bombardment von Collot, P., Gautherin, G., Agius, B., Rigo, S., Rochet, F.

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Low-energy ion gun (5-50 eV) for the study of the discharge-surface interactions von Gautherin, G, Lejeune, C

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Investigation of ion-beam-sputtered Nb-Ti thin films by complementary use of backscattering and nuclear-reaction microanalysis von Bouchier, Daniel, Gautherin, Guy, Agius, Bernard, Rigo, Serge

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Annealing effect on mechanical stress in reactive ion-beam sputter-deposited silicon nitride films von FOURRIER, A, BOSSEBOEUF, A, BOUCHIER, D, GAUTHERIN, G

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Emittance and Brightness of Multiply-Charged Ion Beams from Duopigatron and Duoplasmatron Sources von Aubert, J., Gautherin, G., Gilles, J. P., Grandchamp, J. P., Lejeune, C.

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Effects of impurities on the interface of ion beam sputtered tungsten with silicon von Meyer, Françoise, Bouchier, Daniel, Benhocine, Abdelhamid, Gautherin, Guy

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Ion beam sputtering deposition of tungsten: Energy and mass effects of primary ions von Meyer, Françoise, Louchier, Daniel, Stambouli, Valérie, Pellet, Claude, Schwebel, Christian, Gautherin, Guy

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WN x films prepared by reactive ion-beam sputter deposition von Bosseboeuf, A., Fourrier, A., Meyer, F., Benhocine, A., Gautherin, G.

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Superconducting properties of YBa2Cu3O7 − x thin films deposited on silicon covered by epitaxial stabilized ZrO2 von Bruyère, J.C., Pluta, J., Brunel, M., Muret, P., Schwebel, C., Gautherin, G.

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